=hr= SEME LAB MECHANICAL DATA IRF150 Dimensions in mm (inches) $9.95 (1.573) NCHANN EL 30.40 (1.197) POWER MOSFET 30.15 (1.187) 6.54 (0658) Voss 100V serie Ip(cont) 38A oles g . Rpsion) 0.0550 . FEATURES Y HERMETICALLY SEALED TO-3 METAL 20.32 (0.800) PAC KAG E wa | SIMPLE DRIVE REQUIREMENTS 1.57 (0.062) Ss t 1.47 (0.058) > dia. i 2 ples. CD TO-3 Metal Package Pin 1 Gate Pin 2 Source Case Drain 7.87 (0.310 6.99 (0.275 1.78 (0.070) 1.52 (0.060) > < 0.475 0.445 12.07 11.30 SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (T,,5. = 25C unless otherwise stated) Ves Gate Source Voltage +20V Ip Continuous Drain Current (Ves =0, Tease = 25C) 38A Ip Continuous Drain Current (Vag =9, Tease = 100C) 24A lom Pulsed Drain Current 1 152A Pp Power Dissipation @ Toase = 25C 150W Linear Derating Factor 1.2W/C Eas Single Pulse Avalanche Energy 2 150mJ laR Avalanche Current 2 38A Ear Repetitive Avalanche Energy 2 15mJ dv/dt Peak Diode Recovery 3 5.5V/ns Ty, Tstg Operating and Storage Temperature Range -55 to +150C Ty Lead Temperature 1.6mm (0.63) from case for 10 sec. 300C Notes 1) Pulse Test: Pulse Width < 300us, 6 < 2% 2) @ Vpp = 50V , L = 160uH , Re = 25 , Peak |, = 38A, Starting Ty = 25C 3) @ Igp < 838A, di/dt < 300A/Us , Vpp < BVpgs, Ty $ 150C , Suggested Reg = 2.350 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96=r= SEME LAB IRF150 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. | Typ. | Max. | Unit STATIC ELECTRICAL RATINGS BVpsg Drain Source Breakdown Voltage | Veg =0 Ip = 1mA 100 Vv ABVpss Temperature Coefficient of Reference to 25C 0.13 vic AT; Breakdown Voltage Ip = 1mA R Static Drain Source OnState Veg = 10V Ip =24A 0.055 Q DS(on) Resistance 1 Vag = 10V Ip = 38A 0.065 Vesithy Gate Threshold Voltage Vos = Vas Ip = 250mA 2 4 Vv Dts Forward Transconductance 1 Vps 2 15V Ips = 24A 9 S (0) Ipss Zero Gate Voltage Drain Current Vas = 9 ns vee = uA less Forward Gate Source Leakage Veg = 20V 100 nA less Reverse Gate Source Leakage Veg = -20V 100 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Veg =0 3700 Coss Output Capacitance Vps = 25V 1100 pF Criss Reverse Transfer Capacitance f = 1MHz 200 Qg Total Gate Charge Veg = 10V 50 125 Qgs Gate Source Charge Ip = 38A 8 22 nc Qga Gate Drain (Miller) Charge Vps = 0.5BVpss 25 65 tavon) Turn-On Delay Time Vp = 50V 35 t Rise Time 190 : Ip = 38A ns taor) TurnOff Delay Time R. = 2.350 170 ty Fall Time an 130 SOURCE DRAIN DIODE CHARACTERISTICS Is Continuous Source Current 38 A Ism Pulse Source Current 2 152 ; lg = 38A Ty = 25C Vsp Diode Forward Voltage 1 1.8 V Veg = 0 ter Reverse Recovery Time Ip = 38A Ty = 25C 500 ns Qr Reverse Recovery Charge 1 dj/d,< 100A/us Vpp < 50V 2.9 uc ton Forward TurnOn Time Negligible PACKAGE CHARACTERISTICS Lp Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0 nH Ls Internal Source Inductance (from 6mm down source lead to source bond pad) 13 THERMAL CHARACTERISTICS Rejc Thermal Resistance Junction Case 0.83 Recs Thermal Resistance Case Sink 0.12 C/W Roya Thermal Resistance Junction Ambient 30 Notes 1) Pulse Test: Pulse Width < 300ms, 6< 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96