Ordering number: EN 25114 | 25A1593/2SC4135 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications - Power supplies, relay drivers, lamp drivers Features - Adoption of FBET, MBIT processes - High breakdown voltage and large - Fast switching speed current capacity - Small and slim package permitting 25A1593/28C4 135-applied sets to be made more Compact ( ): 2841593 Absolute Maximum Ratings at Ta=25C Collector to Base Voltage Vopo Collector to Emitter Voltage Vero Emitter to Base Voltage VeRO Collector Current. Io Collector Current(Pulse) Icp Collector Dissipation Po Junction Temperature Ti Storage Temperature Tstg Electrical Characteristics at Ta=25C Collector Cutoff Current Icpo Emitter Cutoff Current TeBo BC Current Gain hep Gain-Bandwidth Product fr Te=25C ( -}120 (- )100 (-)6 (-)2 (-)3 1 15 150 =55 to +150 Nc -)100V, T= =0 min Vor =(- -)5v, I ce (- )100mA 7100# Von=(- -)10V, tp =(-)100mA Output Capacitance Cop Vope(-) 10V, fo Mz {100 R 200 | 140 S 280 | 20 Package Dimensions 2045B (unit:mm) ~ 65_.) 3 ; realy fle wy Oo wl s 0.85 4. i 1. 0.7.) ~ 2 . D6]. owed 0:5 o- p23 1: Base 2: Collector (2B) 3: Emitter 234-4 .e-29 4; Collector SANYO: TP 0 T 400} unit Vv v Vv A A W W % Se typ max unit (-}100 nA (-)}100 nA 4oot 120 MHz (25) pF 16 pF Continued on next page. : The 2SA1593/2SC4135 are classified by 100mA hpp as follows: Package Dimensions 2044B (unit: mm). 0.65 wy = 1: Base a 2: Collector 3: Emitter 4: Collector SANYO: TP-FA SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg 2 1 ee Ueno, LEIS ku, uh S56) 110 JAPAN 8219MO/4097TA, TS No. 2511- 14-___2$A1593/28C4135. Continued from preceding page. max unit min typ C-E Saturation Voltage Vor(sat) Ic=(-) 14, Ip=(-) 100maA (-0.22)(-0.6) Vv. 0.13 0.4 V B-E Saturation Voltage Vpp(saz) Ic=(-)1A,Ip=(-) 100mA (-)0.85(-)1.2 V C~B Breakdown Voltage Voprycpo Ic=(~)10nA, Ip=0 (~)120 Vv C-E Breakdown Voltage Vopr)ceo Ic=(-) 1mA, Rpp= co (=) 100 v E-B Breakdown Voltage - VpR)EBO Tp=(-)10uA,tn=0 (=)6 Vv Turn-on Time on See specified Test Circuit. (80) ns " 80 ns Storage Time tste " (750) ns n 1000 ns Fall Time tp " (40) ns n 50 ns Switching Time Test Circuit PW = 20us Collector Current ,Ip -A Collector Current ,Ip -A SV Wlgy =-l0lgg=Tco = 0.74 Ic - VcE 2.0 C ce -1.6 1.2 0.8 -0.4 0 = 0 -1 -2 -3 -4. ~5 Collector to Emitter Voltage, Vop - V_ Ic - VCE -f.0 25A1593 0.6 G -10 -20 Collector to Emitter Voltage,Vop ~ V -30 -40 -50 Unit (Resistance : 2, Capacitance : F) (For PNP, the polarity 1s reversed.) Tc + VCE we 2504135 a 14.6 o mq gta p & & t, 0-8 red o ao qt 0.4 o oO 0 i B=0 0 f .2). 3 5 Collector to Emitter Voltage ,Vop - Vv 1.0 Ic - VCE 28064135 BR te Rm a Collector Current,I, - A 2 o . ss e = 3m 0 B= 0 "40 20 300 CO Collector to Emitter Voltage; Vor =~ 40 59 No.2511- 2/4. .25A1593/2SC4135 Collector to Emitter Saturation Gain-Bandwidth Product ,fp - MHz CE(sat) - Vol tage; V; -2.4 1_- VBE : 28A1593 =< -- 1 2.0 Vce=-5v [/} : | B -4.6 ou E 3 =1.2 fo o. in i t min in wu 3 -0.8 a ' 3 fe | eo oS g-0.8 7 I 0 AL : 0 -0.2 -04 -06 -08 -10 +t Base to Emitter Voltage, Vpn - V seco hFE - Ic 28A159 VCE=-SV pa a 3 sl i o om a g 5 100 oO Oo a -0.01 -O4 -1.0 Collector Current ,Ip -A fT - Ic Z2SA15935/ 2804135 ue | Laney _ 2 oe ws {For PNP, minus sign is omitted.) oo ? 575, 7 3 57,5) 2 3 Collector Current,Ip = A -00 Vce(sat) - I 28A1593 Ic/ 1 B=1 mY: L jc 3 -0.01 ~0.1 -1.0 llector Current,Io = A Collector to Emitter Saturation Voltage ; Vor ( sat) - ny DC Current Gain, hep 26 Ic - VBE 2504135 VcEs , 2.0 CE=5 o // La] a 16 a Oo 6 ef i=) RY in [s) Bp 0.8 apn 0 8 f fy 2 & 3 0.4 / 0 AL 0 0.2 0.46 0.6 0.8 1.0 1.2 Base to Enitter Voltage, Vpp ~ V hfe - Ic 8 $C4135 Vce=5 8 0.01 Of 1.0 Collector Current,I>, - cob - Veg 1000 5 25A1593/28C4135 a f=1MHz 1! 5 a ~ } 25 eo 3 Ays > 25. T33 3 PSSS a 2 35 a Ph o MN os he [~~ & 100 <] 5 Ph O 7 he ao 7 a 5 3 oy (For PNP, minus sign is omitted.) 7490 2 357 0 2 3 SF 7a 2 Collector to Base Voltage, Voz - Vce(sat) - I 8 28064135 Ic/ [1Bs1 8 _ S 2 0-4 1.0 Collector Current ,Ip ~ A No.2511-3/4 |_25A1593/28C4135_ Base to Emitter Saturation 0 VBE(sat) - I 0 sat) - I 2SA1593 a 28C4135 1c/4 1 B=1 a Ic/1B=10 3s - i ob * ae > ad Ste a oo 2 o 2 23 > 75 g 2 -0.01 -o.1 =-1.0 0.01 oa 1.0 Collector Current,I, - A Collector Current ,I ~ A A.S.0, 16 Po ~ Ta 15 28A1593/28C4135 1 14 = 4 ae 4g ob s 3 o 3 10 S a o O. a 8 & a ao 0.44 a 3 os $ te Q @ 25A1593/28C4135 $4 A Single pulse o od _ ~ ea 2 Q 0.0} Te=25C 3 ; No heat sink (For PNP, minus sign is omitted.) 1.0 7 10 109? o 2 40 60 80 i 127 40 160 Collector to Emitter Voltage, Vop -V Anbient Temperature,Ta ~ C M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, @ Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- ead for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2511=4/4 |