TPCA8015-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC-DC Converter Applications Unit: mm 1.27 0.4 0.1 High-speed switching * Small gate charge: QSW = 13 nC (typ.) * Low drain-source ON-resistance: RDS (ON) = 4.4 m (typ.) * High forward transfer admittance: |Yfs| = 60 S (typ.) * Low leakage current: IDSS = 10 A (max) (VDS = 40 V) * Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 0.15 0.05 0.595 5.0 0.2 0.05 S S Absolute Maximum Ratings (Ta = 25C) 4 1 0.6 0.1 Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k) VDGR 40 V Gate-source voltage VGSS 20 V (Note 1) ID 35 Pulsed (Note 1) IDP 105 PD 45 W JEDEC PD 2.8 W JEITA DC Drain current Drain power dissipation (Tc = 25) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) A 1.6 W EAS 114 mJ IAR 35 A EAR 2.7 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25) (Note 4) 4.25 0.2 5 1,2,3: SOURCE 5,6,7,8: DRAIN TOSHIBA PD (Note 2b) 3.5 0.2 Symbol 8 A 0.8 0.1 Characteristic 4 1 0.166 0.05 * 1.1 0.2 Small footprint due to a small and thin package 0.95 0.05 * 0.05 M A 5 5.0 0.2 6.0 0.3 8 4: GATE 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1 2 3 4 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-10-06 TPCA8015-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc = 25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 C/W Rth (ch-a) 44.6 C/W Rth (ch-a) 78.1 C/W Marking (Note 5) TPCA 8015-H Part number Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25C (initial), L = 100 H, RG = 25 , IAR = 35 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-10-06 TPCA8015-H Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cutoff current IDSS VDS = 40 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 40 V (BR) DSX ID = 10 mA, VGS = -20 V 25 VDS = 10 V, ID = 1 mA 1.1 2.3 VGS = 4.5 V, ID = 17.5 A 6.1 7.9 VGS = 10 V, ID = 17.5 A 4.4 5.4 VDS = 10 V, ID = 17.5 A 30 60 2155 200 780 1.4 5 12 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Gate resistance VDS = 10 V, VGS = 0 V, f = 1 MHz rg tr VGS Turn-on time ton Fall time toff 10 48 Total gate charge (gate-source plus gate-drain) Qg VDD 32 V, VGS = 10 V, ID = 35 A 37 VDD 32 V, VGS = 5 V, ID = 35 A 21 7 Gate-source charge 1 Qgs1 Gate-drain ("Miller") charge Qgd 9 Gate switch charge QSW 13 VDD 20 V Duty 1%, tw = 10 s VDD 32 V, VGS = 10 V, ID = 35 A V m S pF ns tf Turn-off time 0V 4.7 Switching time ID = 17.5A VOUT 10 V RL =1.11 Rise time V nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 105 A -1.2 V VDSF IDR = 35 A, VGS = 0 V 3 2008-10-06 TPCA8015-H ID - VDS ID - VDS 10 4 8 100 3.5 3.4 (A) 30 ID Common source Ta = 25C Pulse test 3.2 Drain current ID Drain current 6 20 3 10 VGS = 2.8 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 3.5 3.4 60 3.2 40 3 20 VGS = 2.8 V 1 (V) 2 VDS 5 (V) VDS - VGS 1 Common source Ta = 25 Pulse test (V) Common source VDS = 10 V Pulse test 0.8 (A) 60 Drain-source voltage ID Drain current 4 VDS 80 3 Drain-source voltage ID - VGS 100 Common source Ta = 25C Pulse test 3.7 4.5 80 0 0 1 3.8 4 10 4.5 6 40 3.6 (A) 50 40 Ta = -55C 100 20 25 0.6 0.4 ID = 35 A 0.2 18 9 0 0 1 2 4 3 Gate-source voltage 5 VGS 0 0 6 2 (V) 4 Gate-source voltage Common source VDS = 10 V Pulse test 100 Ta = -55C 25 100 10 1 0.1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) - ID 100 Drain-source ON-resistance RDS (ON) (m) Forward transfer admittance |Yfs| (S) Yfs - ID 1000 6 Common source Ta = 25C Pulse test 10 4.5 VGS = 10 V 1 0.1 100 (A) 1 Drain current 4 10 ID 100 (A) 2008-10-06 TPCA8015-H RDS (ON) - Ta IDR - VDS 1000 Common source Pulse test Common source 18 A Pulse test 9A IDR 10 8 6 VGS = 4.5 V ID = 9 A,18 A,35 A 4 VGS = 10 V 2 0 -80 -40 0 40 80 Ambient temperature 120 Ta Ta = 25C (A) ID = 35 A Drain reverse current Drain-source ON-resistance RDS (ON) (m) 12 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS (V) 80 120 -1 Vth - Ta 2.5 Vth (V) 1000 Gate threshold voltage Ciss C (pF) 1 1 Capacitance - VDS Capacitance 3 10 (C) 10000 Coss 100 4.5 VGS = 0 V 0.1 0 160 10 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 Drain-source voltage 1.5 1 Common source 0.5 V DS = 10 V ID = 1 mA Pulse test 0 -80 -40 100 VDS 2 (V) 0 40 Ambient temperature Ta 160 (C) Dynamic input/output characteristics Drain-source voltage (V) 16 ID = 35 A Ta = 25C VDS 30 Pulse test VDD = 32 V 20 12 8 VGS 4 10 0 0 10 20 Total gate charge 30 Qg VGS VDS (V) Common source Gate-source voltage 40 0 40 (nC) 5 2008-10-06 TPCA8015-H Transient thermal impedance rth (C/W) rth - tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25 (2) 100 (1) 10 (3) 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 (s) PD - Ta (W) (Note 2a) (1) 2.5 (2) Device mounted on a glass-epoxy board (b) 40 PD (Note 2b) t = 10 s 2 Drain power dissipation Drain power dissipation PD - Tc 50 (1) Device mounted on a glass-epoxy board (a) PD (W) 3 1000 (2) 1.5 1 0.5 0 0 40 80 Ambient temperature 120 Ta 30 20 10 0 160 (C) 0 40 80 Case temperature 120 Tc 160 (C) Safe operating area 100 ID max (Pulsed) * t =1 ms * ID (A) 1000 Drain current 10 ms * 10 1 * Single-pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2008-10-06 TPCA8015-H RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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