TIP120 ... TIP122
TIP120 ... TIP122
NPN Si-Epitaxial Planar Darlington Power Transistors
Si-Epitaxial Planar Darlington-Leistungs-Transistoren NPN
Version 2006-10-17
Dimensions - Maße [mm]
1 = B 2/4 = C 3 = E
Max. power dissipation with cooling
Max. Verlustleistung mit Kühlung
65 W
Collector current
Kollektorstrom
5 A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
TIP120 TIP121 TIP122
Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open VCEO 60 V 80 V 100 V
Collector-Base-voltage – Kollektor-Basis-Spg. E open VCBO 60 V 80 V 100 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
TA = 25°C
TC = 25°C
Ptot
Ptot
2 W 1)
65 W
Collector current – Kollektorstrom (dc) IC5 A
Peak Collector current – Kollektor-Spitzenstrom ICM 8 A
Base current – Basisstrom (dc) IB120 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.5 A, VCE = 3 V
IC = 3 A, VCE = 3 V
hFE
hFE
1000
1000
–
–
–
–
Small signal current gain – Kleinsignal-Stromverstärkung
IC = 3 A, VCE = 4 V, f = 1 MHz hfe 4
1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
3.8
2.54
0.9
1.5
10
±0.2
3.4 3
13.2 1
5
.
7
4
321
Typ e
Typ
TIP120 ... TIP122
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter saturation volt. – Kollektor-Emitter-Sättigungsspg. 2)
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCEsat
VCEsat
–
–
–
–
2 V
4 V
Base-Emitter voltage – Basis-Emitter-Spannung 2)
IC = 3 A, VCE = 3 V VBE – – 2.5 V
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
VCE = 30 V, (B open)
VCE = 40 V, (B open)
VCE = 50 V, (B open)
TIP120
TIP121
TIP122
ICEO
ICEO
ICEO
–
–
–
–
–
–
500 nA
500 nA
500 nA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 60 V, (E open)
VCB = 80 V, (E open)
VCB = 100 V, (E open)
TIP120
TIP121
TIP122
ICBO
ICBO
ICBO
–
–
–
–
–
–
200 nA
200 nA
200 nA
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 100 kHz CCB0 – – 200 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 63 K/W 1)
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W
Admissible torque for mounting
Zulässiges Anzugsdrehmoment M4 9 ± 10% lb.in.
1 ± 10% Nm
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren TIP125 ... TIP127
Equivalent Circuit – Ersatzschaltbild
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG
T
1
T
2
EBC
T2
T1
E2
C2
B1
