NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN
TIP127F PNP
TO-220FP
Desi
ned for General-Pur
ose Am
lifier and Low-S
eed Switchin
A
lications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 100 V
Collector -Emitter Voltage VCEO 100 V
Emitter Base Voltage VEBO 5.0 V
Collector Current -Continuous IC 5.0 A
Collector Current (Peak) ICM 8.0 A
Base Current IB 120 mA
Total Power Dissipation @ Tc=25 deg C PD 65 W
Derate Above 25 deg C 0.52 W/deg C
Total Power Dissipation @ Ta=25 deg C PD 2.0 W
Derate Above 25 deg C 0.016 W/deg C
Unclamped Inductive Load Energy (1) E50mj
Junction Temperature Tj 150 deg C
Storage Temperature Range Tstg -65 to +150 deg C
THERMAL RESISTANCE
From Junction to Ambient Rth(j-a) 62.5 deg C/W
From Junction to Case Rth(j-c) 1.92 deg C/W
(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT
Collector Emitter (sus) Voltage VCEO (sus) * IC=100mA, IB=0 100 - V
Collector Cut off Current ICBO VCB=100V, IE=0 - 0.2 mA
ICEO IB=O, VCE=50V - 0.5 mA
Emitter Cut off Current IEBO VEB=5V,IC=0 - 2.0 mA
Collector Emitter Saturation Voltage VCE(Sat)* IC=3A, IB=12mA - 2.0 V
IC=5A, IB=20mA - 4.0 V
Base Emitter on Voltage VBE(on) * IC=3A, VCE=3V - 2.5 V
DC Current Gain hFE* IC=0.5A, VCE=3V 1.0 - K
IC=3A, VCE=3V 1.0 - K
C
B
Transys
Electronics
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