AUIRGP35B60PD-E
G C E
Gate Collector Emitter
AUTOMOTIVE GRADE
E
G
n-channel
C
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGP35B60PD-E TO-247AD Tube 25 AUIRGP35B60PD-E
1 2017-08-24
*Qualification standards can be found at www.infineon.com
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Thermal Resistance
Parameter Typ. Max.
Units
RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) ––– 0.41
RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) ––– 1.7
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40
Weight 6.0(0.21) ––– g(oz)
°C/W
Min.
–––
–––
–––
–––
–––
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84m
ID (FET equivalent) = 35A
TO-247AD
AUIRGP35B60PD-E
G C E
C
Applications
PFC and ZVS SMPS Circuits
DC/DC Converter Charger
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 60
IC @ TC = 100°C Continuous Collector Current 34
ICM Pulse Collector Current (Ref. Fig. C. T.4) 120
ILM Clamped Inductive Load Current 120
IF @ TC = 25°C Diode Continuous Forward Current 40
IF @ TC = 100°C Diode Continuous Forward Current 15
IFSM Maximum Repetitive Forward Current 60
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 308 W
PD @ TC = 100°C Maximum Power Dissipation 123
TJ Operating Junction and -55 to +150
°C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rat-
ings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
AUIRGP35B60PD-E
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref. Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V
VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.78 — V/°C
VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω 1MHz, Open Collector 4,5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage
— 1.85 2.15
V
IC = 22A, VGE = 15V
— 2.25 2.55 IC = 35A, VGE = 15V
— 2.37 2.80 IC = 22A, VGE = 15V, TJ = 125°C
— 3.00 3.45 IC = 35A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V
IC = 250µA 7,8,9
VGE(th)/TJ Threshold Voltage temp. coefficient — -10 — mV/°C
VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 36 — S
VCE = 50V, IC = 22A,PW = 80µs
ICES
Collector-to-Emitter Leakage Current — 3.0 375
µA VGE = 0V, VCE = 600V
— 0.35 — mA VGE = 0V, VCE = 600V,TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70
V IF = 15A
— 1.20 1.60 IF = 15A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA
VGE = ±20V, VCE = 0V
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref. Fig.
Qg Total Gate Charge (turn-on) — 160 240
nC
IC = 22A 17
Qge Gate-to-Emitter Charge (turn-on) — 55 83 VGE = 15V CT1
Qgc Gate-to-Collector Charge (turn-on) — 21 32 VCC = 400V
Eon Turn-On Switching Loss — 220 270
J
Eoff Turn-Off Switching Loss — 215 265
CT3
Etotal Total Switching Loss — 435 535 IC = 22A, VCC = 390V,
td(on) Turn-On delay time — 26 34
ns
VGE = +15V,
tr Rise time — 6.0 8.0 RG = 3.3, L = 200µH,
td(off) Turn-Off delay time — 110 122 TJ = 25°C
tf Fall time — 8.0 10
Eon Turn-On Switching Loss — 410 465
J
CT3
11,13
WF1,WF2
Eoff Turn-Off Switching Loss — 330 405
Etotal Total Switching Loss — 740 870 IC = 22A, VCC = 390V,
td(on) Turn-On delay time — 26 34
ns
VGE = +15V,
CT3
12,14
WF1,WF2
tr Rise time — 8.0 11 RG = 3.3, L = 200µH,
td(off) Turn-Off delay time — 130 150 TJ = 125°C
tf Fall time — 12 16
Cies Input Capacitance — 3715 —
pF
VGE = 0V
Coes Output Capacitance — 265 — VCC = 30V 16
Cres Reverse Transfer Capacitance — 47 — f = 1.0Mhz
Coes eff. Effective Output Capacitance (Time Related) — 135 — VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Energy Related) — 179 —
TJ = 150°C, IC = 120A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time — 42 60
ns TJ = 25°C 19
— 74 120 TJ = 125°C
Qrr Diode Reverse Recovery Charge — 80 180
nC TJ = 25°C 21
— 220 600 TJ = 125°C
Irr
— 4.0 6.0 A TJ = 25°C 19,20,21,22
— 6.5 10 TJ = 125°C CT5
Peak Reverse Recovery Current
IF = 15A,
VR = 200V,
di/dt = 200A/µs
Notes:
R
CE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
C
oes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
AUIRGP35B60PD-E
3 2017-08-24
0 20 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
IC (A)
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC A)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 2 - Power Dissipation vs.
Case Temperature
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 15V
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
AUIRGP35B60PD-E
4 2017-08-24
Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
0 5 10 15 20
VGE (V)
0
100
200
300
400
500
600
700
800
ICE (A)
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 11A
ICE = 22A
ICE = 35A
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 11A
ICE = 22A
ICE = 35A
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
0 5 10 15 20 25 30 35 40
IC (A)
0
100
200
300
400
500
600
700
800
Energy (µJ)
EOFF
EON
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
010 20 30 40
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
AUIRGP35B60PD-E
5 2017-08-24
Fig. 18 Normalized Typ. VCE(on) vs. Junction Temperature
IC = 22A, VGE= 15V
0 100 200 300 400 500 600 700
VCE (V)
0
5
10
15
20
25
30
Eoes (µJ)
-50 0 50 100 150 200
TJ (°C)
0.8
1.0
1.2
1.4
Normalized VCE(on) (V)
0 50 100 150 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
400V
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 22A
Fig. 15 - Typ. Output Capacitance
Stored Energy vs. VCE
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 16 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
010 20 30 40 50
RG ()
0
100
200
300
400
500
600
700
800
Energy (µJ)
EON
EOFF
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
010 20 30 40 50
RG ()
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
AUIRGP35B60PD-E
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Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
Fig. 20 - Typical Recovery Current vs. dif/dt
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
AUIRGP35B60PD-E
7 2017-08-24
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.139 0.000257
0.077 0.001418
0.194 0.020178
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.363 0.000112
0.864 0.001184
0.473 0.032264
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
C
C
Ci= iRi
Ci= iRi
AUIRGP35B60PD-E
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L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Rg
VCC
DUT
R = VCC
ICM
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.5 - Reverse Recovery Parameter Test Circuit
Fig.C.T.3 - Switching Loss Circuit
AUIRGP35B60PD-E
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
-50
0
50
100
150
200
250
300
350
400
450
9.00 9.20 9.40 9.60
Time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
40
45
I
CE
(A)
TEST CURRENT
90% test current
5% V
CE
10% test current
Eon Loss
tr
-50
0
50
100
150
200
250
300
350
400
450
-0 .20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V )
-5
0
5
10
15
20
25
30
35
40
45
I
CE
(A )
90% I
CE
5% V
CE
5% I
CE
Eoff Loss
tf
AUIRGP35B60PD-E
10 2017-08-24
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
TO-247AD Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGP35B60PD-E
Lot Code
Part Number
IR Logo
TO-247AD package is not recommended for Surface Mount Application.
AUIRGP35B60PD-E
11 2017-08-24
† Highest passing voltage.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level TO-247AD N/A
Machine Model Class M4(+/‐425V)†
AEC-Q101-002
Human Body Model Class H2(+/‐4000V)†
AEC-Q101-001
Charged Device Model
Class C5 (+/‐1125V)†
AEC-Q101-005
RoHS Compliant Yes
ESD
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
8/24/2017
Updated datasheet with corporate template
Corrected typo Qual table -Moisture Sensitivity Level-from “MSL1” to N/A-page 11
Corrected part marking on pages 10
