DATA SH EET
Preliminary specification
Supersedes data of 1999 Nov 02 2000 Feb 02
DISCRETE SEMICONDUCTORS
BLF1046
UHF power LDMOS transistor
M3D381
2000 Feb 02 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on underside eliminates DC isolators, reducing
common mode inductance
•Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
•Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28
CW, class-AB (1-tone) 960 26 45 >14 >45 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02 3
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth mb-h = 0.6 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −4.5 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to heatsink Th=25°C, Pdis =97W;
note 1 1.2 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.6 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.7 mA 65 −−V
V
GSth gate-source threshold voltage VDS = 10 V; ID=70mA 4 −5V
I
DSS drain-source leakage current VGS = 0; VDS =26V −−1µA
I
DSX drain cut-off current VGS =V
GSth +9V; V
DS = 10 V 12.5 −−A
I
GSS gate leakage current VGS =±20 V; VDS =0 −−125 nA
gfs forward transconductance VDS = 10 V; ID= 3.5 A −2−S
RDSon drain-source on-state resistance VGS =V
GSth +9V; I
D= 3.5 A −300 −mΩ
Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz −46 −pF
Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz −37 −pF
Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz −1.5 −pF
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−28
CW, class-AB (1-tone) 960 26 45 >14 >45 −
2000 Feb 02 4
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT467C 99-12-06
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
0.15
0.10
5.59
5.33 9.25
9.04 1.65
1.40 18.54
17.02
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18
4.67
3.94 2.21
1.96
D
D1
U1
1
3
2
A
U2E
E1
p
b
H
Q
F
c
UNIT Q
cD
9.27
9.02
D1
5.92
5.77
E
5.97
5.72
E1FH p q
mm
0.184
0.155
inch
b
14.27 20.45
20.19
U2
U1
5.97
5.72 0.25
w1
0.51
0.006
0.004
0.220
0.210 0.364
0.356 0.065
0.055 0.73
0.67 0.135
0.125 0.087
0.077
0.365
0.355 0.233
0.227 0.235
0.225 0.562 0.805
0.795 0.235
0.225 0.010 0.020
w2
A
M M
C
C
Aw1
w2
AB
M M M
q
B
SOT467C
2000 Feb 02 5
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Feb 02 6
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
NOTES
2000 Feb 02 7
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF1046
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Printed in The Netherlands 603516/04/pp8 Date of release: 2000 Feb 02 Document order number: 9397 750 06752