© 2006 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99390E(03/06)
PolarHVTM HiPerFET
Power MOSFET IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 600 V
VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0 V ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 250 μA
RDS(on) VGS = 10 V, ID = 0.5 ID25 400 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGS Continuous ±30 V
VGSM Tranisent ±40 V
ID25 TC= 25°C18A
IDM TC= 25°C, pulse width limited by TJM 45 A
IAR TC= 25°C18A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 5 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
PLUS220 & PLUS220SMD 4 g
GS
D
PLUS220 (IXFV)
GS
PLUS220SMD (IXFV...S)
D (TAB)
D (TAB)
TO-247 AD (IXFH)
VDSS = 600 V
ID25 =18 A
RDS(on) ≤≤
≤≤
≤400 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤200 ns
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 0.5 ID25, Note 1 9 16 S
Ciss 2500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 280 pF
Crss 23 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
td(off) RG= 5 Ω (External) 62 ns
tf22 ns
Qg(on) 50 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 nC
Qgd 18 nC
RthJC 0.35 °C/W
RthCS (TO-247, PLUS220) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 18 A
ISM Repetitive 54 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IS = 18 A, -di/dt = 100 A/μs 200 ns
QRM VR = 100 V, VGS = 0 V 0.8 μC
FRM 5A
Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
PLUS220SMD (IXFV_S) Outline
PLUS220 (IXFV) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2006 IXYS All rights reserved
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 1. Output Characteristics
@ 25ºC
0
2
4
6
8
10
12
14
16
18
012345678
VDS - V olts
ID - Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
0 3 6 9 12 15 18 21 24 27 30
VDS - Volts
ID - Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
024681012141618
VDS - V olts
ID - Amperes
V
GS
= 10V
7V
6V
5V
Fig. 4. R
DS(on)
No rm a liz e d to I
D
= 9A Value v s.
Junction Temperature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C entigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 18A
I
D
= 9A
Fig. 5. R
DS(on)
No rm a lize d to I
D
= 9A Valu e vs.
Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 5 10 15 20 25 30 35 40 45
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Current v s.
Case Temperature
0
2
4
6
8
10
12
14
16
18
20
-50-25 0 25 50 75100125150
TC - Degrees Centigrade
ID - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
3.5 4 4.5 5 5.5 6 6.5 7
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
0 5 10 15 20 25 30 35 40
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40º C
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 9A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - Pi coFarads
f
= 1 MHz Ciss
Crss
Coss
Fig. 12. Forwa rd-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
25µs
1ms
100µs
R
DS(on)
Limit s
10ms
DC
© 2006 IXYS All rights reserved
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 13. Maximum Transient Therm al Resistance
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
(th)JC
- ºC / W
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