i ee Ww 2 N 5449 - 2 N 5450 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and power stages Besondere Merkmale: Features: @ Verlustleistung 360 mW @ Power dissipation 360 mW Abmessungen in mm Dimensions in mm c Normgehause Case 10 A3 DIN 41868 JEDEC TO 92 Z Gewicht - Weight max. 0,2 g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung UcBo 50 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung UcEO 30 V Collector-emitter voltage Emitter-Basis-Sperrspannung UVEBO 5 Vv Emitter-base voltage Kollektorstrom Io 800 mA Collector current Gesamtverlustleistung Total power dissipation lamb = 25C Prot 360 mw Sperrschichttemperatur yj 150 C dunction temperature Lagerungstemperaturbereich stg -55 ... +150 C Storage temperature range B 2/V.2. 560/0875 A 1 5332 N 5449 - 2 N 5450 71297 We lamb - Warmewiderstand Min. Typ. Max. Thermal resistance Sperrschicht-Umgebung Rthya 350 C/W Junction ambient Statische KenngrBen DC characteristics lamb = 25C, falls nicht anders angegeben unless otherwise specified Kollektorreststrom Collector cut-off current Emitterreststrom Emitter cut-off current Vep =3V TEBO 100 nA Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage *) AQL = 0,65% 5342 N 5449 - 2 N 5450 Kollektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig = 10 mA Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage fe = 100 pA Kollektor-Sattigungsspannung Collector saturation voltage Ig = 100 mA, Jp = 5 mA 2.N 5449 2N 5450 Basis-Emitter-Spannung Base-emitter voltage Uce =2V, Io = 100 mA Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio UcgE = 2V, Io = 100 mA 2N 5449 2 N 5450 Transitfrequenz Gain bandwidth product Uce = 2V, 7g = 50 mA, f = 50 MHz Kollektor-Basis-Kapazitat Collector-Base capacitance Ucs =10V, f=1 MHz t *) AQL = 0,65%, ') - = 0,01, fp = 0,3 ms Min. Typ. Max. Uer)cEo*)') 30 v pryepo*) = Vv Ucesat |) 600 mV UceEsat ) 800 mV Upe) 0,5 1 Vv hee *)') 100 300 hee *)') 50 150 ST 100 MHz Cospo 12 pF 5352 N 5449 - 2 N 5450 { 731338 Th 2N5449 400 mA family = 25 C 300 200 100 0 1 2v Uce ' 731337 Th 2N5449 160 120 40 01 1 10 100 mA lo> 536 \ 731339 Th c 2N5450 400 mA 200 100 0 10 20V UE { 131336 Th 2N5450 fee 400 300 200 100