Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B
BC168A, BC168B, BC168C
BC169B, BC169C
TO-92
Plastic Package
AF Pre and Driver Stages as well as for Universal Application.
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL BC167 BC168 BC169 UNITS
Collector -Emitter Voltage VCEO 45 20 20 V
Collector -Emitter Voltage VCES 50 30 30 V
Emitter -Base Voltage VEBO 6.0 5 5 V
Collector Current Continuous IC100 100 50 mA
Collector Peak Current ICM 200 200 mA
Base Current IB50 50 5 mA
Power Dissipation @ Ta=25ºC Ptot 300 mW
Storage Junction Tstg -55 to +150 ºC
Junction Temperature Tj150 ºC
THERMAL RESISTANCE
Junction to Ambient Rth(j-a) 420 K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS
Collector -Emitter Voltage BC167 BVCEO IC=2mA,IB=0 45 V
BC168, 169 20 V
Emitter-Base Voltage BC167 BVEBO IE=1µA, IC=0 6V
BC168, 169 5V
Collector-Cut off Current BC167 ICES VCE=50V,VBE=0 15 nA
BC168, 169 VCE=30V,VBE=0 15 nA
Ta =125ºC
BC167 VCE=50V,VBE=0 4µA
BC168, 169 VCE=30V,VBE=0 4µA
IS/ISO 9002
Lic#
SC/ L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 5