DATA SH EET
Product specification
Supersedes data of 2000 Oct 04 2000 Dec 20
DISCRETE SEMICONDUCTORS
BLF1046
UHF power LDMOS transistor
M3D381
2000 Dec 20 2
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on underside eliminates DC isolators, reducing
common mode inductance
•Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
•Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in the common source broadband test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 960; f2= 960.1 26 45 (PEP) >14 >35 ≤−26
CW, class-AB (1-tone) 960 26 45 >14 >46 −
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −4.5 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Dec 20 3
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. Th=25°C; Rth j-h = 1.87 K/W,
unless otherwise specified.
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
Tuning Procedure
For high gain and efficiency:
In CW mode (PD= 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < −15 dB, then adjust C6 and C8
for high gain until Gp> 14 dB at PL=50W.
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f1= 960 MHz; f2= 960.1 MHz) at PL= 45 W (PEP)
and tune first C2 and then C6 and C8 for lowest d3 (below −28 dBc).
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to
heatsink Th=25°C; Pdis = 97 W; note 1 1.87 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.7 mA 65 −−V
V
GSth gate-source threshold voltage VDS = 10 V; ID=70mA 4 −5V
I
DSS drain-source leakage current VGS = 0; VDS =26V −−1µA
I
DSX drain cut-off current VGS =V
GSth +9V; V
DS = 10 V 12.5 −−A
I
GSS gate leakage current VGS =±20 V; VDS =0 −−125 nA
gfs forward transconductance VDS = 10 V; ID= 3.5 A −2−S
RDSon drain-source on-state resistance VGS =V
GSth +9V; I
D= 3.5 A −300 −mΩ
Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz −46 −pF
Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz −37 −pF
Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz −1.5 −pF
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%) dim
(dBc)
CW, class-AB (2-tone) f1= 960; f2= 960.1 26 300 45 (PEP) >14 >35 ≤−26
CW, class-AB (1-tone) 960 26 300 45 >14 >46 −
2000 Dec 20 4
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
handbook, halfpage
020 P
L
(W)
Gp
(dB)
60
20
15
5
0
10
ηD
(%)
80
60
20
0
40
40
MLD455
ηD
Gp
PAE
Fig.2 Powergainanddrainefficiencyasfunctions
of load power; typical values.
VDS = 26 V; IDQ = 330 mA; Th≤25 °C; f = 960 MHz;
tuned for high efficiency; see tuning procedure.
handbook, halfpage
020 P
L
(W)
Gp
(dB)
40 80
20
15
5
0
10
60
MLD456
ηD
(%)
Gp
ηD
80
60
20
0
40
Fig.3 Powergainanddrainefficiencyasfunctions
of load power; typical values.
VDS = 26 V; IDQ = 330 mA; Th≤25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure
handbook, halfpage
010 P
L
(PEP) (W)
Gp
(dB)
50
20
15
5
0
10
20 30 40
MLD457
ηD
(%)
(1)
(3) (2)
ηD
80
60
20
0
40
Fig.4 Powergainanddrainefficiencyasfunctions
of peak envelope power; typical values.
VDS = 26 V; Th≤25 °C; f1= 960 MHz; f2= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
handbook, halfpage
010 P
L
(PEP) (W)
d3
(dB)
50
0
−20
−60
−80
−40
20 30 40
MLD458
(1)
(2)
(3)
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
VDS = 26 V; Th≤25 °C; f1= 960 MHz; f2= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
2000 Dec 20 5
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
handbook, halfpage
010 P
L
(PEP) (W)
d5
(dBc)
50
0
−20
−60
−80
−40
20 30 40
MLD459
(1)
(3)
(2)
VDS = 26 V; Th≤25 °C; f1= 960 MHz; f2= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
Fig.6 Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
handbook, halfpage
010 P
L
(PEP) (W)
d7
(dBc)
50
0
−20
−60
−80
−40
20 30 40
MLD460
(1)
(2)
(3)
VDS = 26 V; Th≤25 °C; f1= 960 MHz; f2= 960.1 MHz;
tuned for high linearity; see tuning procedure.
(1) IDQ = 240 mA.
(2) IDQ = 300 mA.
(3) IDQ = 400 mA.
Fig.7 Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
handbook, halfpage
020
10
0
2
4
6
8
4 8 12 16 PL (W)
EVM
(%)
MLD461
peak
rms
Fig.8 Error vector magnitude (EVM) / EDGE
8PSK as a functions of load power; typical
values.
VDS = 26 V; IDQ = 300 mA; Th≤25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
handbook, halfpage
04 P
L
(W)
Gp
(dB)
20
20
15
5
0
10
81216
MLD462
η
(%)
Gp
EVM
(%)
η
40
30
10
0
20
EVM
Fig.9 EDGE 8PSK EVM, gain and efficiency as
functions of load power; typical values.
VDS = 26 V; IDQ = 300 mA; Th≤25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
2000 Dec 20 6
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
handbook, halfpage
04 P
L
(W)
ACPR
(dBc)
20
0
−20
−60
−80
−40
81216
MLD463
200 KHz
250 KHz
400 KHz
Fig.10 EDGE 8PSK adjacent channel power as a
function of load power; typical values.
VDS = 26 V; IDQ = 300 mA; Th≤25 °C; f = 960 MHz;
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
handbook, halfpage
0
850 900 f (MHz) 1000
20
15
5
10
0
80
60
20
40
950
MLD464
Gp
(dB) ηD
(%)
Gp
ηD
Fig.11 Powergainanddrainefficiencyasfunctions
of frequency; typical values.
VDS = 28 V; IDQ = 300 mA; PL= 45 W (PEP); Th≤25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
handbook, halfpage
−80
850 900
d3
d5
d7
f (MHz) 1000
0
−20
−60
−40
950
MLD465
dim
(dBc)
Fig.12 Intermodulation distortion as a function of
frequency; typical values.
VDS = 28 V; IDQ = 300 mA; PL= 45 W (PEP); Th≤25 °C;
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
2000 Dec 20 7
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
handbook, halfpage
840 880
ri
xi
f (MHz)
Zi
(Ω)
920 960
4
2
−2
−4
0
MLD468
Fig.13 Optimal source impedance as a function of
frequency (series components);
typical values.
VDS = 26 V; IDQ = 300 mA; PL= 45 W; Th≤25 °C;
tuned for high linearity; see tuning procedure.
handbook, halfpage
840 880
RL
XL
f (MHz)
ZL
(Ω)
920 960
4
2
−2
−4
0
MLD469
Fig.14 Optimal load impedance as a function of
frequency (series components);
typical values.
VDS = 26 V; IDQ = 300 mA; PL= 45 W; Th≤25 °C;
tuned for high linearity; see tuning procedure.
2000 Dec 20 8
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
handbook, full pagewidth
C16
C5
C1
L3 L4
L6
L7
L5
L2
L8
L1
R4
F1
R1 R5
R3
R2
50 Ω
input
C7
C2
C4
C6
C8
C3
C11
L9 50 Ω
output
C10
C13
C15C14
C9
VDS (26 V)
MLD466
Fig.15 Class-AB broadband test circuit at f = 800 to 1000 MHz.
handbook, full pagewidth
C11
TRGD
C1
C12
C7
C5
C14
+ 26 V ground
C15
L2
L1 C3
R5
R3
R1
R2
R4
C13
C9
C10
F1
C4
C2
39 mm
C16
MLD467
C8
output
input
C6
IDQ adjustment
Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
2000 Dec 20 9
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
List of components (see Figs 15 and 16)
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C7 multilayer ceramic chip capacitor; note 1 33 pF
C2, C6 Tekelec variable capacitor 0.8 to 8.2 pF
C3, C4 multilayer ceramic chip capacitor; note 1 13 pF
C5 multilayer ceramic chip capacitor; note 1 7.5 pF
C8, C16 Tekelec variable capacitor 0.5 to 4.6 pF
C9, C11 multilayer ceramic chip capacitor; note 1 33 pF
C10, C12 multilayer ceramic chip capacitor; note 1 150 pF
C13, C14 multilayer ceramic chip capacitor 33 nF
C15 electrolytic capacitor 47 µF; 63 V
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 5 turns enamelled 0.6 mm copper wire int. dia.=4mm;
length = 5 mm
L2 2 turns enamelled 0.6 mm copper wire int. dia.=4mm;
length = 1.6 mm
L3 stripline; note 2 50 Ω16 ×2.36 mm
L4 stripline; note 2 42.5 Ω16 ×3.1 mm
L5 stripline; note 2 14.3 Ω6×12 mm
L6 stripline; note 2 20.2 Ω3×8mm
L7 stripline; note 2 14.3 Ω14 ×12 mm
L8 stripline; note 2 40 Ω17 ×3.4 mm
L9 stripline; note 2 50 Ω7×2.36 mm
R1, R5 metal film resistor 10 kΩ, 0.6 W
R2 variable resistor 10 kΩ
R3 metal film resistor 1 kΩ, 0.6 W
R4 metal film resistor 10 Ω, 0.6 W
2000 Dec 20 10
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT467C 99-12-06
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
0.15
0.10
5.59
5.33 9.25
9.04 1.65
1.40 18.54
17.02
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18
4.67
3.94 2.21
1.96
D
D1
U1
1
3
2
A
U2E
E1
p
b
H
Q
F
c
UNIT Q
cD
9.27
9.02
D1
5.92
5.77
E
5.97
5.72
E1FH p q
mm
0.184
0.155
inch
b
14.27 20.45
20.19
U2
U1
5.97
5.72 0.25
w1
0.51
0.006
0.004
0.220
0.210 0.364
0.356 0.065
0.055 0.73
0.67 0.135
0.125 0.087
0.077
0.365
0.355 0.233
0.227 0.235
0.225 0.562 0.805
0.795 0.235
0.225 0.010 0.020
w2
A
M M
C
C
Aw1
w2
AB
M M M
q
B
SOT467C
2000 Dec 20 11
Philips Semiconductors Product specification
UHF power LDMOS transistor BLF1046
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditionsabovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyoftheseproducts,conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,and makesnorepresentations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 70
Philips Semiconductors – a world wide company
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilipsDevelopmentCorporation,SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 613524/07/pp12 Date of release: 2000 Dec 20 Document order number: 9397 750 07658
