
LESHAN RADIO COMPANY, LTD.
BAV70WT1–1/3
Dual Switching Diodes
1
3
2
BAV70WT1
CASE 419–04, STYLE 5
SOT–323 (SC–70)
3
CATHODE
ANODE
1ANODE
2
DEVICE MARKING
BAV70WT1 = A4
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse V oltage V R70 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1) PD200 mW
TA = 25°C
Derate above 25°C 1.6 mW/°C
Thermal Resistance, Junction to Ambient RθJA 0.625 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate(2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown V oltage V(BR) 70 — Vdc
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(VR = 70 Vdc) IR1 — 5.0 µAdc
(VR = 50 Vdc) IR2 — 100 nAdc
Diode Capacitance CD— 1.5 pF
(VR = 0, f = 1.0 MHz)
Forward Voltage VFmVdc
(IF = 1.0 mAdc) — 715
(IF = 10 mAdc) — 855
(IF = 50 mAdc) — 1000
(IF = 150 mAdc) — 1250
Reverse Recovery T ime trr — 6.0 ns
(IF= IR=10 mAdc, RL= 100Ω, IR(REC)= 1.0 mAdc) (Figure 1)
Forward Recovery V oltage VRF — 1.75 V
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.