GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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KEY PARAMETERS
VCES 600V
VCE(sat) (typ) 2.2V
IC25 (max) 350A
IC75 (max) 250A
IC(PK) (max) 700A
FEATURES
■n - Channel
■High Switching Speed
■Low Forward Voltage Drop
■Isolated Base
APPLICATIONS
■PWM Motor Control
■UPS
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
GP250MHB06S
Note: When ordering, use complete part number.
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001
123
11
10
8
95
4
6
7
3(C1)
2(E2)
1(E1C2)
11(C2)
9(C1)
6(G2)
7(E2)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: M
(See package details for further information)
GP250MHB06S
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
Symbol Conditions
DC junction to case per arm oC/kW100
Max.
-
Min.
Parameter Units
Rth(j-c) Thermal resistance - transistor
Tstg Storage temperature range
Transistor oC150
125
-
- 40
Rth(c-h) Thermal resistance - Case to heatsink
(per module)
Mounting torque 5Nm (with mounting grease) 15-
- Mounting - M6 Nm5-
-
oC/kW
TjJunction temperature
oC
Screw torque
Diode oC125-
Electrical connections - M6 Nm5-
Thermal resistance - diode DC junction to case oC/kW250--
Rth(j-c)
VCES Collector-emitter voltage
-
DC, Tcase = 25˚C
1ms, Tcase = 25˚C
350
A
Test ConditionsSymbol
IC
Gate-emitter voltage
VGE = 0V 600
Units
V±20
700
Max.Parameter
Collector current
1250Maximum power dissipationPmax
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltageVisol V
2500
V
VGES
A
IC(PK)
W(Transistor)
DC, Tcase = 75˚C 250 A
1ms, Tcase = 75˚C A500
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz -27000-pF
IFDiode forward current
IFM Diode maximum forward current
DC
tp = 1ms A
250
500
-
-
-
-
VFDiode forward voltage IF = 250A, 1.91.1-
A
V
IF = 250A, Tj = 125˚C 1.81.05-V
ELECTRICAL CHARACTERISTICS
Symbol
Collector cut-off current
IGES Gate leakage current
Conditions
VGE = 0V, VCE = VCES
VGE = ±20V, VCE = 0V
mA15
1
Max.
-
Typ.
-
-
Min.
-
Parameter
Tj = 25˚C unless stated otherwise.
V7.5
2.72.2-
Gate threshold voltage
VGE = 15V, IC = 250A
-4IC = 10mA, VGE = VCE
Units
ICES
µA
VGE(TH)
V
2.82.3-VGE = 15V, IC = 250A, T j = 125˚C V
VCE(SAT) Collector-emitter saturation voltage
VGE = 0V, VCE = VCES, Tj = 125˚C mA50--
GP250MHB06S
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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INDUCTIVE SWITCHING CHARACTERISTICS
Tj = 25˚C unless stated otherwise
Symbol
td(off) Turn-off delay time
Fall time
EOFF Turn-off energy loss
Conditions
ns
ns
mJ
-
-
-
20
310
-
-
-
Parameter Min. Typ. Max. Units
810
tf
td(on) Turn-on delay time ns
-- 330
Rise time
EON Turn-on energy loss
ns
mJ
-
-
12
130
-
-tr
IC = 250A
VGE = ±15V
VCE = 50% VCES
RG(ON) = RG(OFF) = 5Ω
L ~ 100nH
Tj = 125˚C unless stated otherwise.
trr Diode reverse recovery time ns
-165-
Qrr Diode reverse recovery charge µC
-15-
IF = 250A
VR = 50%VCES, dIF/dt = 1500A/µs
td(off) Turn-off delay time
Fall time
EOFF Turn-off energy loss
ns
ns
mJ
-
-
-
30
450
-
-
-
1050
tf
td(on) Turn-on delay time ns
-- 380
Rise time
EON Turn-on energy loss
ns
mJ
-
-
18
160
-
-
tr
IC = 250A
VGE = ±15V
VCE = 50% VCES
RG(ON) = RG(OFF) = 5Ω
L ~ 200nH
trr Diode reverse recovery time ns
-230-
Qrr Diode reverse recovery charge µC-23-
IF = 250A
VR = 50%VCES, dIF/dt = 1500A/µs
GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10
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TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics Fig.4 Typical output characteristics
Fig.5 Typical turn-on energy vs collector current Fig.6 Typical turn-on energy vs collector current
0
50
100
150
200
250
300
450
500
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15V
Common emitter
T
case
= 125˚C
400
350
V
ge
= 12V
V
ge
= 10V
0 300100 150
Collector current, I
C
- (A)
0
10.0
30.0
Turn-on energy, E
ON
- (mJ)
T
j
= 25˚C
V
GE
= ±15V
V
CE
= 300V
A: R
g
= 15Ω
B: R
g
= 10Ω
C: R
g
= 5Ω
A
B
C
17.5
20.0
12.5
15.0
22.5
25.0
27.5
2.5
5.0
7.5
200 25050
0300100 150
Collector current, I
C
- (A)
0
10.0
30.0
Turn-on energy, E
ON
- (mJ)
T
j
= 125˚C
V
GE
= ±15V
V
CE
= 300V
A: R
g
= 15Ω
B: R
g
= 10Ω
C: R
g
= 5Ω
A
B
C
17.5
20.0
12.5
15.0
22.5
25.0
27.5
2.5
5.0
7.5
200 25050
0
50
100
150
200
250
300
450
500
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
V
ge
= 20/15V
Common emitter
T
case
= 25˚C
400
350
V
ge
= 12V
V
ge
= 10V
GP250MHB06S
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current
Fig.10 Typical diode turn-off energy vs collector currentFig.9 Typical diode turn-off energy vs collector current
0 300100 150
Collector current, IC - (A)
0
5
10
40
Turn-off energy, EOFF - (mJ)
Tj = 25˚C
VGE = ±15V
VCE = 300V
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 5Ω
A
B
C
20
15
25
30
35
200 25050
0 300100 150
Collector current, I
C
- (A)
0
5
10
40
Turn-off energy, E
OFF
- (mJ)
T
j
= 125˚C
V
GE
= ±15V
V
CE
= 300V
A: R
g
= 15Ω
B: R
g
= 10Ω
C: R
g
= 5Ω
A
B
C
20
15
25
30
35
200 25050
0 300100 150 200 250
Collector current, I
C
- (A)
0
4
3
5
Diode turn-off energy, E
OFF(diode)
- (mJ)
T
j
= 25˚C
V
GE
= ±15V
V
CE
= 300V R
g
= 5Ω
R
g
= 10Ω
R
g
= 15Ω
2
1
50
0 300100 150 200 250
Collector current, IC - (A)
0
4
3
5
Diode turn-off energy, EOFF(diode) - (mJ)
Tj = 125˚C
VGE = ±15V
VCE = 300V
Rg = 5Ω
Rg = 10Ω
Rg = 15Ω
2
1
50
GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10
www.dynexsemi.com
Fig.11 Typical switching characteristics
Fig.13 Reverse bias safe operating area Fig.14 Forward bias safe operating area (DC and single pulse)
Fig.12 Diode typical forward characteristics
0 200100 150
Collector current, I
C
- (A)
0
800
1400
Switching times, - (ns)
T
j
= 125˚C
V
GE
= ±15V
V
CE
= 300V
R
g
= 5Ω
t
f
t
d(off)
t
r
t
d(on)
1200
1000
200
600
400
250 300
50
0
25
50
75
100
125
150
175
200
225
250
00.25 0.50 0.75 1.00 1.25
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
T
j
= 125˚C
T
j
= 25˚C
0
100
200
300
400
500
600
0 200 400 600 800
Collector-emitter voltage, V
ce
- (V)
Collector current, IC - (A)
T
j
= 125˚C
V
ge
= ±15V
R
g
= 5Ω
1
10
100
1000
10000
1 10 100 1000
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
50µs
100µs
I
C
max. (single pulse)
I
C
max. DC (continuous)
t
p
= 1ms
GP250MHB06S
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Fig.15 Transient thermal impedance
1
10
100
1000
0.001 0.01 10.1 10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
Transistor
GP250MHB06S
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10
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PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
23
8
106 ± 0.8
108 ± 0.8
3x M6
93 ± 0.3
1
48 ± 0.3
62 ± 0.8
4x Fast on
tabs
28 ± 0.5 28 ± 0.5
38max
23
10
11
9
84
5
7
6
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
GP250MHB06S
10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4325-6 Issue No. 6.0 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
