GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4923-5.0 FEATURES DS4923-6.0 April 2002 KEY PARAMETERS n - Channel VCES 600V High Switching Speed VCE(sat)* (typ) 2.0V Low Forward Voltage Drop (max) 500A Isolated Base IC25 IC75 (max) 350A IC(PK) (max) 1000A APPLICATIONS PWM Motor Control UPS The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. *(measured at the power busbars and not the auxiliary terminals) 6(G2) 11(C2) 7(E2) 3(C1) 2(E2) 1(E1C2) 5(E1) 9(C1) 4(G1) The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. Fig. 1 Half bridge circuit diagram These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems. ORDERING INFORMATION Order as: GP350MHB06S Note; When ordering, use complete part number. 11 10 1 2 3 8 9 6 7 5 4 Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP350MHB06S ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC Max. Units 600 V 20 V DC, Tcase = 25C 500 A DC, Tcase = 75C 350 A 1ms, Tcase = 25C 1000 A 1ms, Tcase = 75C 700 A Parameter Collector current IC(PK) Test Conditions VGE = 0V - Pmax Maximum power dissipation (Transistor) 1750 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V THERMAL AND MECHANICAL RATINGS Symbol Parameter Conditions Min. Max. - 70 o - 160 o o Units Rth(j-c) Thermal resistance - transistor DC junction to case per arm Rth(j-c) Thermal resistance - diode DC junction to case Rth(c-h) Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease) - 15 Junction temperature Transistor - 150 o Diode - 125 o - 40 125 o Mounting - M6 - 5 Nm Electrical connections - M6 - 5 Nm Tj Tstg - 2/10 Storage temperature range Screw torque - - C/kW C/kW C/kW C C C Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S ELECTRICAL CHARACTERISTICS Tj = 25C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(SAT) Parameter Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tj = 125C - - - mA Gate leakage current VGE = 20V, VCE = 0V - - 1 A Gate threshold voltage IC = 10mA, VGE = VCE 4 - 7.5 V VGE = 15V, IC = 350A - 2.0 2.6 V VGE = 15V, IC = 350A, Tj = 125C - 2.2 2.8 V Collector cut-off current Collector-emitter saturation voltage Conditions IF Diode forward current DC - - 215 A IFM Diode maximum forward current tp = 1ms - - 700 A VF Diode forward voltage IF = 350A, - 1.51 2.31 V IF = 350A, Tj = 125C - 1.5 2.3 V VCE = 25V, VGE = 0V, f = 1MHz - 22500 - pF Cies Input capacitance Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + LM Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP350MHB06S INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25C unless stated otherwise Symbol td(off) tf EOFF Parameter Conditions Min. Typ. Max. Units - 730 - ns IC = 350A - 250 - ns VGE = 15V - 26 - mJ - 320 - ns - 150 - ns - 10 - mJ IF = 350A - 190 - ns VR = 50%VCES, dIF/dt = 1000A/s - 12 - C - 910 - ns IC = 350A - 490 - ns VGE = 15V - 40 - mJ - 380 - ns - 250 - ns - 35 - mJ IF = 350A - 280 - ns VR = 50%VCES, dIF/dt = 1000A/s - 18 - C Turn-off delay time Fall time Turn-off energy loss VCE = 50% VCES td(on) tr EON Turn-on delay time RG(ON) = RG(OFF) = 5 L ~ 100nH Rise time Turn-on energy loss trr Diode reverse recovery time Qrr Diode reverse recovery charge Tj = 125C unless stated otherwise. td(off) tf EOFF Turn-off delay time Fall time Turn-off energy loss VCE = 50% VCES td(on) tr EON Turn-on delay time L ~ 100nH Rise time Turn-on energy loss trr Diode reverse recovery time Qrr Diode reverse recovery charge 4/10 RG(ON) = RG(OFF) = 5 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S TYPICAL CHARACTERISTICS VGE = 20/15/12/10V VGE = 20/15/12/10V 450 400 450 Common emitter Tcase = 25C 400 Vce is measured at power busbars Vce is measured at power busbars and not the auxiliary terminals and not the auxiliary terminals 350 Collector current, Ic - (A) Collector current, Ic - (A) 350 300 250 200 150 300 250 200 150 100 100 50 50 0 0 0.5 1.0 1.5 2.0 2.5 Collector-emitter voltage, Vce - (V) 0 0.5 3.0 Fig.3 Typical output characteristics 3.5 Tj = 125C V GE = 15V 40 VCE = 300V A A 35 14 Turn-on energy, EON - (mJ) Turn-on energy, EON - (mJ) 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 45 Tj = 25C VGE = 15V VCE = 300V 16 B 12 10 C 8 6 B 30 25 C 20 15 10 4 2 0 0 1.0 Fig.4 Typical output characteristics 20 18 Common emitter Tcase = 125C 50 200 250 100 150 Collector current, IC - (A) A: Rg = 15 B: Rg = 10 C: Rg = 5 5 300 0 0 Fig.5 Typical turn-on energy vs collector current 350 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 250 Collector current, IC - (A) 350 Fig.6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 300 5/10 GP350MHB06S 30 40 A B 20 15 10 5 0 0 50 15 10 0 0 350 A: Rg = 15 B: Rg = 10 C: Rg = 5 50 100 150 200 250 Collector current, IC - (A) 300 350 Fig.8 Typical turn-off energy vs collector current 3.5 Rg = 5 Tj = 25C VGE = 15V 3.0 VCE = 300V Rg = 10 2.5 2.0 Rg = 15 1.5 1.0 0.5 50 100 150 200 250 Collector current, IC - (A) 300 350 Fig.9 Typical diode turn-off energy vs collector current Diode turn-off energy, EOFF(diode) - (mJ) Diode turn-off energy, EOFF(diode) - (mJ) 20 300 3.5 6/10 C 25 5 Fig.7 Typical turn-off energy vs collector current 0 0 A B 30 A: Rg = 15 B: Rg = 10 C: Rg = 5 100 150 200 250 Collector current, IC - (A) Tj = 125C VGE = 15V VCE = 300V 35 C Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 25 45 Tj = 25C VGE = 15V VCE = 300V 3.0 Tj = 125C VGE = 15V VCE = 300V Rg = 5 Rg = 10 2.5 Rg = 15 2.0 1.5 1.0 0.5 0 0 50 100 150 200 250 Collector current, IC - (A) 300 350 Fig.10 Typical diode turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S 1400 1200 450 Tj = 125C VGE = 15V VCE = 300V Rg = 5 td(off) 400 350 Foward current, IF - (A) 1000 Switching times, - (ns) VF is measured at power busbars and not the auxiliary terminals 300 800 250 Tj = 125C 200 600 Tj = 25C 150 400 td(on) tf 100 200 50 tr 0 0 0 50 250 100 150 200 Collector current, IC - (A) 300 350 Fig.11 Typical switching characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Foward voltage, VF - (V) 1.6 1.8 Fig.12 Diode typical forward characteristics 700 10000 1000 500 Collector current, IC - (A) Collector current, IC - (A) 600 400 300 200 IC max. (single pulse) 50s IC 100 100s m tp = 1ms ax .D C (c on tin uo us ) 10 100 0 0 Tj = 125C Vge = 15V Rg = 5 600 200 400 Collector-emitter voltage, Vce - (V) Fig.13 Reverse bias safe operating area 800 1 1 10 100 Collector-emitter voltage, Vce - (V) Fig.14 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 7/10 GP350MHB06S Transient thermal impedance, Zth (j-c) - (C/kW ) 1000 Diode 100 Transistor 10 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig.15 Transient thermal impedance 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP350MHB06S PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 6 62 0.8 48 0.3 11 1 10 2 3 7 4x Fast on tabs 8 5 9 4 93 0.3 3x M6 23 38max 8 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP350MHB06S POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS4923-6 Issue No. 6.0 April 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com