MCC BDX33 THRU BDX33D omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 0,9:708 * * * * Designed For Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D 70W at 25 Cass Temperature 10A Continuous Collector Current Minimum hFE of 750 at 3.0V, 3.0A NPN Silicon Power Darlingtons : $EVROXWH 0D[LPXP 5DWLQJV # & 8QOHVV 2WKHUZLVH 1RWHG Symbol VCBO VCEO VEBO IC IB PTOT PTOT Rating Collector-Base Voltage (IE=0) BDX33 BDX33A BDX33B BDX33C BDX33D Collector-Emitter Voltage (IB=0) BDX33 BDX33A BDX33B BDX33C BDX33D Emitter-Base Voltage Continuous Collector Current Continuous Base Current Continuous Device Dissipation at (or below) 25 Case Temperature (see Note1) Continuous Device Dissipation at (or below) 25 Free Air Temperature (see Note 2) Operating Free Air Temperature Range Storage Temperature Range Operating Free-Air Temperature Range : : Value Unit 45 60 80 100 100 V TO-220 V A A W 2.0 W V A U 1 2 V(BR)CEO Revision: 1 Min 45 60 80 100 100 Max Unit V PIN 1. PIN 2. PIN 3. K -55~+150 -55~+150 -55~+150 Typ 3 H BASE COLLECTOR EMITTER V L J D R G N Parameter Collector-Emitter Breakdown Voltage (IC=100mA, IB=0,see note 3) BDX33 BDX33A BDX33B BDX33C BDX33D Q T (OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG Symbol S 4 45 60 80 100 100 5.0 10 0.3 70 : : : : Case Temperature at the Rate of 0.56 W/: : Free Air Temperature at the Rate of 16m W/: TJ TSTG TA NOTES: 1. Derate Linearly to 150 2. Derate Linearly to 150 C B F A B C D F G H J K L Q R S T U INCHES .595 .620 .380 .405 .160 .190 .025 .035 .142 .147 .190 .210 .110 .130 .018 .025 .500 .562 .045 .060 .100 .120 .080 .110 .045 .055 .235 .255 -----.050 www.mccsemi.com MM 15.11 9.65 4.06 0.64 3.61 4.83 2.79 0.46 12.70 1.14 2.54 2.04 1.14 5.97 ----- 15.75 10.29 4.82 0.89 3.73 5.33 3.30 0.64 14.27 1.52 3.04 2.79 1.39 6.48 1.27 2004/12/13 MCC BDX33 thru BDX33D TM Micro Commercial Components Symbol Parameter Min Typ Max Collector-Emitter Cut-Off Current 0.5 (VCE=30V, IB=0) BDX33 0.5 (VCE=30V, IB=0) BDX33A 0.5 ICEO (VCE=40V, IB=0) BDX33B 0.5 (VCE=50V, IB=0) BDX33C 0.5 (VCE=60V, IB=0) BDX33D AA (VCE=30V, IB=0, TC=100 ) BDX33 AA BDX33A (VCE=30V, IB=0, TC=100 ) AA BDX33B (VCE=40V, IB=0, TC=100 ) AA BDX33C (VCE=50V, IB=0, TC=100 ) AA BDX33D (VCE=60V, IB=0, TC=100 ) Collector Cut-Off Current 1.0 (VCB=45V, IE=0) BDX33 1.0 (VCB=60V, IE=0) BDX33A 1.0 ICBO (VCB=80V, IE=0) BDX33B 1.0 (VCB=100V, IE=0) BDX33C 1.0 (VCB=100V, IE=0) BDX33D EAA (VCB=45V, IE=0, TC=100 ) BDX33 EAA BDX33A (VCB=60V, IE=0, TC=100 ) EAA (VCB=80V, IE=0, TC=100 ) BDX33B EAA (VCB=100V, IE=0, TC=100 ) BDX33C EAA BDX33D (VCB=120V, IE=0, TC=100 ) IEBO Emitter Cut-Off Current (VEB=5.0V, IC=0) 10 hFE Forward Current Transfer Ratio 750 (VCE=3.0V, IC=4.0A) BDX33 750 (VCE=3.0V, IC=4.0A) BDX33A 750 (VCE=3.0V, IC=3.0A) (see notes 3 and 4) BDX33B 750 (VCE=3.0V, IC=3.0A) BDX33C 750 (VCE=3.0V, IC=3.0A) BDX33D VBE(ON) Base-Emitter Voltage 2.5 (VCE=3.0V, IC=4.0A) BDX33 2.5 (VCE=3.0V, IC=4.0A) BDX33A 2.5 (VCE=3.0V, IC=3.0A) (see notes 3 and 4) BDX33B 2.5 (VCE=3.0V, IC=3.0A) BDX33C 2.5 (VCE=3.0V, IC=3.0A) BDX33D VCE(SAT) Collector-Emitter Saturation Voltage 2.5 (IB=8.0mA, IC=4.0A) BDX33 2.5 (IB=8.0mA, IC=4.0A) BDX33A 2.5 (IB=6.0mA, IC=3.0A) (see notes 3 and 4) BDX33B 2.5 (IB=6.0mA, IC=3.0A) BDX33C 2.5 (IB=6.0mA, IC=3.0A) BDX33D VEC Parallel Diode Forward Voltage (IE=8.0A, IB=0) 4.0 NOTES: 3. These parameters must be measured using pulse techniques, tp=300V GXW\ F\FOH 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. Unit : : : : : mA : : : : : mA mA V V V 7KHUPDO &KDUDFWHULVWLFV Symbol R-& R-$ Parameter Junction to Case Thermal Resistance Junction to Free Air Thermal Resistance 5HVLVWLYH/RDG6ZLWFKLQJ &KDUDFWHULVWLFV DW Symbol ton toff Parameter Turn-On Time Turn-Off Time Min : Typ Max 1.78 62.5 :/W :/W Unit Typ 1.0 5.0 Max Unit s s &DVH 7HPSHUDWXUH Test Conditions IC=3.0A, IB(on)=12mA, IB(off)=-12mA VBE(off)=-3.5V, RL WP V GF Min 2% o o Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. Revision: 1 www.mccsemi.com 2004/12/13 MCC BDX33 thru BDX33D TM Micro Commercial Components TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AF 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = 3 V t p = 300 s, duty cycle < 2% 100 0*5 1*0 10 TCS130AH 2*0 tp = 300 s, duty cycle < 2% IB = IC / 100 1*5 1*0 TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A Figure 1. Figure 2. THERMAL INFORMATION BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 2*0 1*5 1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 TIS130AB 80 Ptot - Maximum Power Dissipation - W VBE(sat) - Base-Emitter Saturation Voltage - V 2*5 MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TCS130AJ 3*0 10 IC - Collector Current - A 70 60 50 40 30 20 10 1*0 10 IC - Collector Current - A Figure 3. 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 4. Revision: 1 www.mccsemi.com 2004/12/13