BDX33
THRU
BDX33D
NPN Silicon
Power Darlingtons
0,9:708
• Designed For Complementary Use with BDX34, BDX34A, BDX34B,
BDX34C and BDX34D
• 70W at 25
:
Cass Temperature
• 10A Continuous Collector Current
• Minimum hFE of 750 at 3.0V, 3.0A
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°
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Symbol Rating Value Unit
VCBO Collector-Base Voltage (IE=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
100
V
VCEO Collector-Emitter Voltage (IB=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
100
V
VEBO Emitter-Base Voltage 5.0 V
IC Continuous Collector Current 10 A
IB Continuous Base Current 0.3 A
PTOT Continuous Device Dissipation at (or below) 25
:
Case Temperature (see Note1) 70 W
PTOT Continuous Device Dissipation at (or below) 25
:
Free Air Temperature (see Note 2) 2.0 W
TJ Operating Free Air Temperature Range -55~+150
:
TSTG Storage Temperature Range -55~+150
:
TA Operating Free-Air Temperature Range -55~+150
:
NOTES: 1. Derate Linearly to 150
:
Case Temperature at the Rate of 0.56 W/
:
2. Derate Linearly to 150
:
Free Air Temperature at the Rate of 16m W/
:
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Symbol Parameter Min Typ Max Unit
V(BR)CEO
Collector-Emitter Breakdown
Voltage
(IC=100mA, IB=0,see note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
100
V
TO-220

 INCHES MM

A .595 .620 15.11 15.75
B .380 .405 9.65 10.29
U ------ .050 ----- 1.27
C .160 .190 4.06 4.82
D .025 .035 0.64 0.89
F .142 .147 3.61 3.73
G .190 .210 4.83 5.33
H .110 .130 2.79 3.30
J .018 .025 0.46 0.64
K .500 .562 12.70 14.27
L .045 .060 1.14 1.52
Q .100 .120 2.54 3.04
R .080 .110 2.04 2.79
S .045 .055 1.14 1.39
T .235 .255 5.97 6.48
G R
B
Q
H
U
LD
C
J
K
A
F
S
T
1
3
4
2
N
V
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
omponents
20736 Marilla Street Chatsworth

 !"#
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MCC
www.mccsemi.com
Revision: 1 2004/12/13
TM
Micro Commercial Components
BDX33 thru BDX33D
Symbol Parameter Min Typ Max Unit
ICEO
Collector-Emitter Cut-Off Current
(VCE=30V, IB=0) BDX33
(VCE=30V, IB=0) BDX33A
(VCE=40V, IB=0) BDX33B
(VCE=50V, IB=0) BDX33C
(VCE=60V, IB=0) BDX33D
(VCE=30V, IB=0, TC=100
:
) BDX33
(VCE=30V, IB=0, TC=100
:
) BDX33A
(VCE=40V, IB=0, TC=100
:
) BDX33B
(VCE=50V, IB=0, TC=100
:
) BDX33C
(VCE=60V, IB=0, TC=100
:
) BDX33D
0.5
0.5
0.5
0.5
0.5
ÄÃ
ÄÃ
ÄÃ
ÄÃ
ÄÃ
mA
ICBO
Collector Cut-Off Current
(VCB=45V, IE=0) BDX33
(VCB=60V, IE=0) BDX33A
(VCB=80V, IE=0) BDX33B
(VCB=100V, IE=0) BDX33C
(VCB=100V, IE=0) BDX33D
(VCB=45V, IE=0, TC=100
:
) BDX33
(VCB=60V, IE=0, TC=100
:
) BDX33A
(VCB=80V, IE=0, TC=100
:
) BDX33B
(VCB=100V, IE=0, TC=100
:
) BDX33C
(VCB=120V, IE=0, TC=100
:
) BDX33D
1.0
1.0
1.0
1.0
1.0
ÈÁÃ
ÈÁÃ
ÈÁÃ
ÈÁÃ
ÈÁÃ
mA
IEBO Emitter Cut-Off Current
(VEB=5.0V, IC=0)
10 mA
hFE Forward Current Transfer Ratio
(VCE=3.0V, IC=4.0A) BDX33
(VCE=3.0V, IC=4.0A) BDX33A
(VCE=3.0V, IC=3.0A) (see notes 3 and 4) BDX33B
(VCE=3.0V, IC=3.0A) BDX33C
(VCE=3.0V, IC=3.0A) BDX33D
750
750
750
750
750
VBE(ON) Base-Emitter Voltage
(VCE=3.0V, IC=4.0A) BDX33
(VCE=3.0V, IC=4.0A) BDX33A
(VCE=3.0V, IC=3.0A) (see notes 3 and 4) BDX33B
(VCE=3.0V, IC=3.0A) BDX33C
(VCE=3.0V, IC=3.0A) BDX33D
2.5
2.5
2.5
2.5
2.5
V
VCE(SAT) Collector-Emitter Saturation Voltage
(IB=8.0mA, IC=4.0A) BDX33
(IB=8.0mA, IC=4.0A) BDX33A
(IB=6.0mA, IC=3.0A) (see notes 3 and 4) BDX33B
(IB=6.0mA, IC=3.0A) BDX33C
(IB=6.0mA, IC=3.0A) BDX33D
2.5
2.5
2.5
2.5
2.5
V
VEC Parallel Diode Forward Voltage
(IE=8.0A, IB=0)
4.0 V
NOTES: 3. These parameters must be measured using pulse techniques, tp=300
VGXW\F\FOH
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
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Symbol Parameter Min Typ Max Unit
R
-&
Junction to Case Thermal Resistance 1.78
:
/W
R
-$
Junction to Free Air Thermal Resistance 62.5
:
/W
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:
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Symbol Parameter Test Conditions
Min Typ Max Unit
ton Turn-On Time 1.0
ô
s
toff Turn-Off Time
IC=3.0A, IB(on)=12mA, IB(off)=-12mA
VBE(off)=-3.5V, RL

W
P

V GF
2% 5.0
ô
s
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MCC
www.mccsemi.com
Revision: 1 2004/12/13
TM
Micro Commercial Components
Figure 1. Figure 2.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AF
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0 TCS130AH
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AJ
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
Figure 3.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
025 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS130AB
MCC
BDX33 thru BDX33D
www.mccsemi.com
Revision: 1 2004/12/13
TM
Micro Commercial Components