
(1) Depends on package
BIPOLARICS, INC. Part Number BRF630
FEATURES:
• High Gain Bandwidth Product
ft = 12 GHz typ @ IC = 30mA
• Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
• High Gain
|S21 | 2 = 16.9 dB @ 1.0 GHz
12.0 dB @ 2.0 GHz
• Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
• Electrical Characteristics ( T A = 25oC)
PRODUCT DATA SHEET
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
SYMBOL PARAMETERS & CONDITIONS UNIT MIN. TYP. MAX.
ftGain Bandwidth Product GHz 12.0
VCE = 8V, IC = 25 mA unless stated
VCE = 8V, IC =10 mA
CCB Collector Base Capacitance: VCB = 8V f = 1MHz pF 0.25
(1)
Absolute Maximum Ratings:
VCEO Collector-Emitter Voltage 7 V
VEBO Emitter-Base Voltage 1.5 V
IC Collector Current 60 mA
TJ Junction Temperature 200 oC
TSTG Storage Temperature -65 to 150 oC
VCBO Collector-Base Voltage 7 V
SYMBOL PARAMETERS RATING UNITS
|S21 | 2Insertion Power Gain: f = 1.0 GHz dB 16.9
f = 2.0 GHz dB 12.0
P1dB Power output at 1dB compression: f = 1.0 GHz dBm 18.0
G1dB Gain at 1dB compression: f = 1.0 GHz dBm 15.0
NF Noise Figure: VCE = 8V, IC = 10mA f = 1.0 GHz dB 1.4
hFE Forward Current Transfer Ratio: f = 1MHz 30 150 300
ICBO Collector Cutoff Current : VCB = 8V µA 0.2
IEBO Emitter Cutoff Current : VEB = 1V µA 1.0
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF630 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.