PEMX1,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2001 Aug 30 2001 Nov 07

DISCRETE SEMICONDUCTORS

PEMX1

NPN general purpose double

transistor

M3D74

2001 Nov 07 2

NXP Semiconductors Product data sheet

NPN general purpose double transistor PEMX1

FEATURES

•300 mW total powe r dissipation

•Very small 1.6 mm x 1.2 mm ultra thin package

•Excellent coplanarity due to s tr aight leads

•Replaces two SC-75/SC -89 packaged transisto rs on

same PCB area

•Reduced required PCB area

•Reduced pick and place costs.

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

NPN double transistor pair in a SOT666 plastic package.

PNP complement: PEMT1.

MARKING

PINNING

TYPE NUMBER MARKING CODE

PEMX1 ZZ

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

handbook, halfpage

MAM447

132

TR1 TR2

123

46 5

Top view

Fig.1 Simplified outline (SOT666) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed- circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW

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NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor PEMX1

THERMAL CHARACTE RISTICS

Notes

1. Transistor mounted on an FR4 printed- circuit board.

2. The only recommended soldering is reflow soldering.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

ICBO collector-base cut-off current VCB = 30 V; IE = 0 −100 nA

VCB = 30 V; IE = 0; Tj = 150 °C−10 μA

IEBO emitter-base cu t-off current VEB = 4 V; IC = 0 −100 nA

hFE DC current gain VCE = 6 V; IC = 1 mA 120 −

VCEsat collector-emitter saturation

voltage IC = 50 mA; IB = 5 mA; note 1 −200 mV

Cccollector capacitance VCB = 12 V; IE = Ie = 0; f = 1MHz −1.5 pF

fTtransition frequen c y IC = 2 mA; VCE = 12 V; f = 100 MHz 100 −MHz

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NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor PEMX1

handbook, full pagewidth

300

100

200

MGU430

10−111010

2103

hFE

IC mA

Fig.2 DC current gain as a function of collector current; typical values.

2001 Nov 07 5

NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor PEMX1

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

01-01-04

01-08-27

IEC JEDEC EIAJ

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface mounted package; 6 leads SOT66

wMA

2001 Nov 07 6

NXP Semiconductors Pr oduct data shee t

NPN general purpose double transistor PEMX1

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or co mpleting a design.

2. The product s ta tus of device(s) described in this do cument may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t s pecification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property ri gh ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this document does not form p art of any quotation or co nt ra ct, is b elieve d to be accurate and reliable and may be change d

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/02/pp7 Date of release: 2001 Nov 07 Document orde r number: 9397 750 09052