Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions * Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 * Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Fast switching speed. * Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 3 2.3 2.3 unit:mm 2044B [2SA1593/2SC4135] 6.5 5.0 4 0.5 0.5 2.3 2 2.5 1 0.6 0.8 0.85 1.2 7.0 5.5 1.5 2.3 3 1.2 0 to 0.2 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1003TN (KT)/8219MO/4097TA, TS No.2511-1/5 2SA1593/2SC4135 ( ) : 2SA1593 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO (-)120 V (-)100 V VEBO IC (-)6 V (-)2 A ICP (-)3 A 1 W Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 15 W 150 C -55 to +150 C Tc=25C * : The 2SA1593/2SC4135 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)100V, IE=0 (-)100 nA Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)100 nA DC Current Gain hFE fT VCE=(-)5V, IC=(-)100mA Gain-Bandwidth Product Output Capacitance Cob VCE=(-)10V, IC=(-)100mA VCB=(-)10V, f=1MHz Collector-to-Emitter Saturation Voltage VCE(sat) IC=(-)1A, IB=(-)100mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(-)1A, IB=(-)100mA Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton Storage Time tstg Fall Time tf 100* IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit 400* 120 MHz (25) pF 16 pF (-0.22) (-0.6) V 0.13 0.4 V (-)0.85 (-)1.2 V (-)120 V (-)100 V (-)6 V (80) ns 80 ns (750) ns 1000 ns (40) ns 50 ns Switching Time Test Circuit IB1 IB2 OUTPUT INPUT PW=20s DC1% RB VR + 50 100F --5V RL + 470F 50V 10IB1= --10IB2= IC=0.7A For PNP, the polarity is reversed. No.2511-2/5 2SA1593/2SC4135 IC -- VCE --2.0 A mA --30 A --20m --1.2 --10mA --5mA --0.8 --3mA --2mA --1mA --0.4 0 --1 --2 --3 --4 2mA IB=0 2 --3mA --2mA --1mA --0.2 4 5 ITR04012 2SC4135 5mA 4. 4.0mA 5.0 --4mA 3 IC -- VCE 1.0 A --0.4 1 Collector-to-Emitter Voltage, VCE - V --5m --0.6 3mA 0.4 0 Collector Current, IC - A Collector Current, IC - A --0.8 5mA ITR04011 2SA1593 A 0.8 0 IC -- VCE --6m 10mA --5 Collector-to-Emitter Voltage, VCE - V --1.0 1.2 1mA IB=0 0 A 50m A 40m A 30m A 20m mA Collector Current, IC - A A 0m --5 2SC4135 1.6 Collector Current, IC - A 0m --4 --1.6 IC -- VCE 2.0 2SA1593 0.8 3.5mA 3.0mA 0.6 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 0.5mA IB=0 0 0 --10 --30 --40 Collector-to-Emitter Voltage, VCE - V --50 0 30 40 50 ITR04014 IC -- VBE 2SC4135 VCE=5V --1.6 --1.2 --0.8 --0.4 1.6 1.2 Ta=7 5C 25C --25 C Collector Current, IC - A 2.0 Ta=7 5C 25C --25C Collector Current, IC - A 20 2.4 2SA1593 VCE=--5V --2.0 0.8 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE - V --1.2 0 0.2 0.4 0.8 1.0 2SC4135 VCE=5V 7 5 DC Current Gain, hFE 5 1.2 ITR04016 hFE -- IC 1000 2SA1593 VCE=--5V 7 0.6 Base-to-Emitter Voltage, VBE - V ITR04015 hFE -- IC 1000 DC Current Gain, hFE 10 Collector-to-Emitter Voltage, VCE - V ITR04013 IC -- VBE --2.4 IB=0 0 --20 Ta=75C 25C --25C 3 2 100 3 Ta=75C 2 100 7 7 5 5 3 --25C 25C 3 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC - A f I 7 --1.0 2 3 ITR04017 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC - A C b V 7 1.0 2 3 ITR04018 No.2511-3/5 2SA1593/2SC4135 C f T -- IC 2 100 7 2S 5 C 3 41 5 3 2 5 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC - A 100 7 5 1.0 3 5 7 2 10 3 5 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 2 7 5 5C 5C --2 7 Ta= 25C 7 2 100 ITR04020 Collector-to-Base Voltage, VCB -- V --10 VCE(sat) -- IC 2SC4135 IC / IB=10 5 3 2 100 7 5 Ta=75C 25C 3 --25C 2 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 7 0.01 7 0.1 2 3 5 7 1.0 3 2 25C 7 75C 2 3 3 ITR04022 2SC4135 IC / IB=10 7 5 5 5 VBE(sat) -- IC 10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 Ta=--25C 3 Collector Current, IC - A 2SA1593 IC / IB=10 --1.0 2 ITR04021 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) - V 2 7 --100 5 3 2 25C 1.0 Ta=--25C 7 75C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 7 0.01 1m s s 10m er ati op on era tio ms C C 25 0.1 25 Ta = = Tc n 100 3 2 5 3 2SA1593 / 2SC4135 Tc=25C Single pulse (For PNP, minus sign is omitted.) 2 0.01 5 3 5 7 1.0 2 3 5 7 10 5 7 2 1.0 3 ITR04024 PC -- Ta 2SA1593 / 2SC4135 12 10 8 6 4 2 No heat sink 1 0 2 3 14 op DC 5 2 0.1 15 DC IC =2.0A 1.0 5 7 Collector Current, IC - A Collector Dissipation, PC - W 2 3 16 ICP=3.0A 3 2 ITR04023 ASO 5 Collector Current, IC - A (For PNP, minus sign is omitted.) 7 1000 3 2 3 5 ITR04019 5 3 159 413 3 2SA1593 IC / IB=10 7 2SC 2 3 VCE(sat) -- IC --1000 2SA 3 (For PNP, minus sign is omitted.) 7 0.01 2SA1593 / 2SC4135 f=1MHz 7 593 1 2SA 10 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 1000 2SA1593 / 2SC4135 VCE=10V Output Capacitance, Cob - pF Gain-Bandwidth Product, fT - MHz 3 C Cob -- VCB 3 5 Collector-to-Emitter Voltage, VCE - V 7 100 2 ITR04025 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR04026 No.2511-4/5 2SA1593/2SC4135 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. PS No.2511-5/5