2SA1593S-TL-E - ON Semiconductor

N1003TN (KT)/8219MO/4097TA, TS No.2511-1/5

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

High-Voltage Switching Applications

Ordering number:ENN2511A

2SA1593/2SC4135

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Package Dimensions

unit:mm

2045B

[2SA1593/2SC4135]

Applications

· Power supplies, relay derivers, lamp drivers.

Features

· Adoption of FBET, MBIT processes.

· High breakdown voltage and large current capacity.

· Fast switching speed.

· Small and slim package permitting 2SA1593/

2SC4135-applied sets to be made more compact.

unit:mm

2044B [2SA1593/2SC4135]

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

6.5 2.3 0.5

1.55.5

0.8

7.0

1.2

2.5

5.0

0.85 0.5

1.2

0 to 0.2

2.3 2.3

0.612

5.0

6.5

0.85

0.7

0.6

1.5

5.5

7.0

0.8

1.6

7.5

0.5

1.2

2.3 0.5

123

2.3 2.3

No.2511-2/5

2SA1593/2SC4135

retemaraPlobmySsnoitidnoC sgnitaR tinU

nimpytxam

tnerruCffotuCrotcelloCI

OBC VBC I,V001)–(= E0=001)–(An

tnerruCffotuCrettimEI

OBE VBE I,V4)–(= C0=001)–(An

niaGtnerruCCDh

EF VEC I,V5)–(= CAm001)–(=*001*004

tcudorPhtdiwdnaB-niaGf

TVEC I,V01)–(= CAm001)–(=021zHM

ecnaticapaCtuptuOC

bo VBC zHM1=f,V01)–(= )52(Fp

61Fp

egatloVnoitarutaSrettimE-ot-rotcelloCV

)tas(EC ICI,A1)–(= BAm001)–(= )22.0–()6.0–(V

31.04.0V

egatloVnoitarutaSrettimE-ot-esaBV

)tas(EB ICI,A1)–(= BAm001)–(=58.0)–(2.1)–(V

egatloVnwodkaerBesaB-ot-rotcelloCV

OBC)RB( ICI,Aµ01)–(= E0=021)–(V

egatloVnwodkaerBrettimE-ot-rotcelloCV

OEC)RB( ICR,Am1)–(= EB =∞001)–(V

egatloVnwodkaerBesaB-ot-rettimEV

OBE)RB( IEI,Aµ01)–(= C0=6)–(V

emiTNO-nruTt

no tiucriCtseTdeificepseeS )08(sn

08sn

emiTegarotSt

gts tiucriCtseTdeificepseeS )057(sn

0001sn

emiTllaFt

ftiucriCtseTdeificepseeS )04(sn

05sn

Electrical Characteristics at Ta = 25˚C

Switching Time Test Circuit

VRRL

--5V 50V

50Ω

INPUT OUTPUT

100µF 470µF

PW=20µs

IB1

IB2

DC≤1%

10IB1= --10IB2= IC=0.7A

For PNP, the polarity is reversed.

( ) : 2SA1593

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

Tc=25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesaB-ot-rotcelloCV

OBC 021)–(V

egatloVrettimE-ot-rotcelloCV

OEC 001)–(V

egatloVesaB-ot-rettimEV

OBE 6)–(V

tnerruCrotcelloCI

C2)–(A

)esluP(tnerruCrotcelloCI

PC 3)–(A

noitapissiDrotcelloCP

C1W

51W

erutarepmeTnoitcnuJjT 051

erutarepmeTegarotSgtsT 051+ot55–

˚C

* : The 2SA1593/2SC4135 are classified by 100mA hFE as follows :

knaRRST

hEF 002ot001082ot041004ot002

No.2511-3/5

2SA1593/2SC4135

--2.0

--1.6

--1.2

--0.8

--0.4

00 --1 --3--2 --4 --5

IC -- VCE

--2mA

--3mA

--1mA

--5mA

--10mA

--30mA

--50mA --40mA

--20mA

IB=0

ITR04011

2SA1593

2.0

1.6

1.2

0.8

0.4

001 3245

IC -- VCE

IB=0

ITR04012

--1.0

--0.8

--0.6

--0.4

--0.2

00 --10 --30--20 --40 --50

IC -- VCE

IB=0

ITR04013

2SA1593

1.0

0.8

0.6

0.4

0.2

0010 3020 40 50

IC -- VCE

IB=0

ITR04014

2SC4135

1mA

2mA

3mA

5mA

1.0mA

0.5mA

2.0mA

1.5mA

4.5mA

4.0mA

3.5mA

3.0mA

2.5mA

5.0mA

20mA

10mA

40mA

50mA

30mA

2SC4135

--2mA

--1mA

--3mA

--4mA

--5mA

--6mA

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector-to-Emitter Voltage, VCE –V

IC -- VBE

--0.4

--0.8

--1.2

--1.6

--2.0

--2.4

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2

ITR04015

2SA1593

VCE=--5V

Ta=75°

25°

--25°

hFE -- IC

100

1000

100

1000

72357

--0.01 --0.1 23 2357

--1.0 ITR04017

2SA1593

VCE=--5V

25°C

--25°C

IC -- VBE

0.4

0.8

1.2

1.6

2.0

2.4

0 0.2 0.4 0.6 0.8 1.0 1.2

ITR04016

2SC4135

VCE=5V

Ta=75°

25°

--25°

Ta=75°C

hFE -- IC

72357

0.01 0.1 23 23571.0 ITR04018

2SC4135

VCE=5V

25°

--25°

Ta=75°

fI Cb V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

Collector Current, IC–A

Base-to-Emitter Voltage, VBE –V

DC Current Gain, hFE

Collector Current, IC–A

DC Current Gain, hFE

Collector Current, IC–A

No.2511-4/5

2SA1593/2SC4135

--100

--10

--1000

2735 2723 357

--0.01 --0.1 --1.0 ITR04021

VCE(sat) -- IC

100

1000

2SA1593

IC / IB=10

--25°C

25°C

Ta=75°

2735 2723 357

0.01 0.1 1.0 ITR04022

VCE(sat) -- IC

2SC4135

IC / IB=10

25°C

Ta=75°C

--25°C

fT -- IC

100

10 0.01 0.1

27323527735 1.0

2SA1593 / 2SC4135

VCE=10V

ITR04019

2SA1593

2SC4135

Cob -- VCB

1000

100

1.0 10

2273527735 100

ITR04020

2SA1593

2SC4135

2SA1593 / 2SC4135

f=1MHz

Gain-Bandwidth Product, fT– MHz

Collector Current, IC–A

Output Capacitance, Cob – pF

Collector-to-Base Voltage, VCB -- V

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

Collector Current, IC–A

Collector-to-Emitter

Saturation Voltage, VCE(sat) – mV

(For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.)

A S O

1.0

0.1

0.01

1.0 10

57 2 3357

100

22357 0

2006040 80 100 140120 160

PC -- Ta

2SA1593 / 2SC4135

ITR04026

ITR04025

ICP=3.0A

ITR04023

VBE(sat) -- IC

--1.0

--10

273572 23357

--0.01 --0.1 --1.0

2SA1593

IC / IB=10

75°C

25°C

Ta=--25°C

ITR04024

VBE(sat) -- IC

1.0

273572 23357

0.01 0.1 1.0

2SC4135

IC / IB=10

75°C

25°C

Ta=--25°C

DC operation

Ta=25

°C

Tc=25°C

100ms

1ms

10ms

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

Collector Current, IC–A

Base-to-Emitter

Saturation Voltage, VBE(sat) – V

2SA1593 / 2SC4135

Tc=25°C

Single pulse

(For PNP, minus sign is omitted.)

Collector-to-Emitter Voltage, VCE –V

Collector Current, IC–A

Collector Dissipation, PC–W

Ambient Temperature, Ta – ˚C

No heat sink

=2.0A

PS No.2511-5/5

2SA1593/2SC4135

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of November, 2003. Specifications and information herein are subject

to change without notice.