Preliminary Technical Information IXFR80N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = 500V 50A 72m 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 50 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA EAS TC = 25C TC = 25C 80 5 A J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 570 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 40A, Note 1 (c) 2011 IXYS CORPORATION, All Rights Reserved 50 A 2 mA High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 72 m DS100323A(06/11) IXFR80N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 40A, Note 1 35 55 S 10 nF 1260 pF 115 pF 0.15 30 ns 20 ns 43 ns 15 ns 200 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 40A RG = 1 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 40A Qgd 77 nC 90 nC 1 = Gate 2,4 = Drain 3 = Source 0.22 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 40A, -di/dt = 100A/s 1.8 15.6 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR80N50Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 80 180 VGS = 10V VGS = 10V 160 70 140 9V 120 50 ID - Amperes ID - Amperes 60 40 30 8V 9V 100 80 60 20 40 10 8V 20 7V 7V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 80 3.4 VGS = 10V 9V 70 R DS(on) - Normalized 50 8V 40 30 20 VGS = 10V 3.0 60 ID - Amperes 20 VDS - Volts VDS - Volts 2.6 I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 7V 10 0.6 6V 0 0.2 0 2 4 6 8 10 12 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 55 3.0 VGS = 10V 2.8 50 TJ = 125C 2.6 45 2.4 40 2.2 35 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 30 25 20 15 1.4 TJ = 25C 1.2 10 1.0 5 0.8 0 0 20 40 60 80 100 120 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR80N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 TJ = - 40C 100 80 25C g f s - Siemens ID - Amperes 80 TJ = 125C 25C - 40C 60 60 125C 40 40 20 20 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 20 40 VGS - Volts 60 80 100 120 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 240 16 VDS = 250V 14 I D = 40A 200 I G = 10mA 12 VGS - Volts IS - Amperes 160 120 10 8 6 80 TJ = 125C 4 TJ = 25C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 VSD - Volts 120 160 200 240 280 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit Ciss 100 10,000 ID - Amperes Capacitance - PicoFarads 80 1,000 Coss 100s 10 1 100 TJ = 150C Crss TC = 25C Single Pulse 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR80N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8) 6-20-11-C