© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 50 A
IDM TC= 25°C, Pulse Width Limited by TJM 240 A
IATC= 25°C 80A
EAS TC= 25°C5J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns
PDTC= 25°C 570 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V∼
FCMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 40A, Note 1 72 mΩ
HiperFETTM
Power MOSFET
Q3-Class
IXFR80N50Q3 VDSS = 500V
ID25 = 50A
RDS(on) ≤≤
≤≤
≤ 72mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
DS100323A(06/11)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
zLow Intrinsic Gate Resistance
z2500V~ Electrical Isolation
zFast Intrinsic Rectifier
zAvalanche Rated
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
(Electrically Isolated Tab)
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
Preliminary Technical Information
IXFR80N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 40A, Note 1 35 55 S
Ciss 10 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1260 pF
Crss 115 pF
RGi Gate Input Resistance 0.15 Ω
td(on) 30 ns
tr 20 ns
td(off) 43 ns
tf 15 ns
Qg(on) 200 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 40A 77 nC
Qgd 90 nC
RthJC 0.22 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive, Pulse Width Limited by TJM 320 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
QRM 1.8 μC
IRM 15.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 40A
RG = 1Ω (External)
IF = 40A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXFR) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
IXFR80N50Q3
Fi g . 1. Ou tp ut C har acter isti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8
V
7
V
9
V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
DS
- V o lt s
I
D
- Amperes
V
GS
= 10V
7
V
9
V
8
V
Fi g . 3. Ou tpu t C har acter isti cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12
V
DS
- Volts
I
D
- Amperes
7
V
8V
6V
V
GS
= 10V
9V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 40A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160 180
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m Dr ai n Cu r r en t vs.
Ca se Temper a tu r e
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Ce ntigrade
I
D
- Amperes
IXFR80N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
V
GS
- Volt s
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
20
40
60
80
100
0 20406080100120
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.30.40.50.60.70.80.91.01.11.21.31.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 40A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8) 6-20-11-C
IXFR80N50Q3
Fi g . 13. Maximum T r an sien t Ther mal I mp ed ance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
