PD - 97619 AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A C Features * * * * * * * * * NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Lead-Free, RoHS Compliant Automotive Qualified* Equivalent MOSFET Parameters RCE(on) typ. = 84m ID (FET equivalent) = 35A G E n-channel C Applications * PFC and ZVS SMPS Circuits * DC/DC Converter Charger E C G Benefits * Parallel Operation for Higher Current Applications * Lower Conduction Losses and Switching Losses * Higher Switching Frequency up to 150KHz TO-247AD AUIRGP35B60PD-E G Gate C Collector E Emitter Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25C Continuous Collector Current 60 IC @ TC = 100C Continuous Collector Current 34 ICM 120 ILM Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current IF @ TC = 25C Diode Continous Forward Current 40 IF @ TC = 100C d 120 A IFRM Diode Continous Forward Current Maximum Repetitive Forward Current 15 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25C Maximum Power Dissipation 308 W PD @ TC = 100C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range e 60 123 -55 to +150 Soldering Temperature for 10 sec. C 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) Parameter --- --- 0.41 C/W RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) --- --- 1.7 RCS Thermal Resistance, Case-to-Sink (flat, greased surface) --- 0.50 --- RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) --- --- 40 Weight --- 6.0 (0.21) --- RJC (IGBT) g (oz) *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com 01/11/10 AUIRGP35B60PD-E Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. 600 -- Temperature Coeff. of Breakdown Voltage -- 0.78 -- Internal Gate Resistance -- 1.7 -- -- 1.85 2.15 IC = 22A, VGE = 15V IC = 35A, VGE = 15V V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ RG VCE(on) Collector-to-Emitter Saturation Voltage Max. Units -- -- 2.25 2.55 -- 2.37 2.80 V Conditions Ref.Fig VGE = 0V, IC = 500A V/C VGE = 0V, IC = 1mA (25C-125C) V 1MHz, Open Collector 4, 5,6,8,9 IC = 22A, VGE = 15V, TJ = 125C IC = 35A, VGE = 15V, TJ = 125C -- 3.00 3.45 VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 VGE(th)/TJ Threshold Voltage temp. coefficient -- -10 -- gfe Forward Transconductance -- 36 -- S ICES Collector-to-Emitter Leakage Current -- 3.0 375 A VGE = 0V, VCE = 600V -- 0.35 -- mA VGE = 0V, VCE = 600V, TJ = 125C -- 1.30 1.70 V -- 1.20 1.60 -- -- 100 VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V IC = 250A 7,8,9 mV/C VCE = VGE, IC = 1.0mA VCE = 50V, IC = 22A, PW = 80s IF = 15A, VGE = 0V 10 IF = 15A, VGE = 0V, TJ = 125C nA VGE = 20V, VCE = 0V Switching Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Qg Qgc Total Gate Charge (turn-on) Parameter -- 160 Max. Units 240 Gate-to-Collector Charge (turn-on) -- 55 83 Conditions nC 17 VCC = 400V CT1 VGE = 15V Qge Gate-to-Emitter Charge (turn-on) -- 21 32 Eon Turn-On Switching Loss -- 220 270 Eoff Turn-Off Switching Loss -- 215 265 Etotal Total Switching Loss -- 435 535 TJ = 25C td(on) Turn-On delay time -- 26 34 IC = 22A, VCC = 390V tr Rise time -- 6.0 8.0 td(off) Turn-Off delay time -- 110 122 IC = 22A, VCC = 390V J ns f TJ = 25C f Fall time -- 8.0 10 Turn-On Switching Loss -- 410 465 Eoff Turn-Off Switching Loss -- 330 405 Etotal Total Switching Loss -- 740 870 TJ = 125C td(on) Turn-On delay time -- 26 34 IC = 22A, VCC = 390V tr Rise time -- 8.0 11 td(off) Turn-Off delay time -- 130 150 tf Fall time -- 12 16 Cies Input Capacitance -- 3715 -- VGE = 0V Coes Output Capacitance -- 265 -- VCC = 30V Cres Coes eff. Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Coes eff. (ER) Effective Output Capacitance (Energy Related) g -- 47 -- 135 -- -- 179 -- RBSOA Reverse Bias Safe Operating Area FULL SQUARE trr Diode Reverse Recovery Time -- 42 60 -- 74 120 -- 80 180 -- 220 600 -- 4.0 6.0 -- 6.5 10 CT3 VGE = +15V, RG = 3.3, L = 200H tf -- CT3 VGE = +15V, RG = 3.3, L = 200H Eon g Ref.Fig IC = 22A IC = 22A, VCC = 390V J ns CT3 VGE = +15V, RG = 3.3, L = 200H f WF1,WF2 CT3 VGE = +15V, RG = 3.3, L = 200H f TJ = 125C pF 11,13 12,14 WF1,WF2 16 f = 1Mhz VGE = 0V, VCE = 0V to 480V 15 TJ = 150C, IC = 120A 3 VCC = 480V, Vp =600V CT2 Rg = 22, VGE = +15V to 0V Qrr Diode Reverse Recovery Charge Irr Peak Reverse Recovery Current ns nC A TJ = 25C IF = 15A, VR = 200V, TJ = 125C di/dt = 200A/s 19 TJ = 25C IF = 15A, VR = 200V, 21 TJ = 125C TJ = 25C di/dt = 200A/s IF = 15A, VR = 200V, 19,20,21,22 TJ = 125C di/dt = 200A/s CT5 Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 . Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% V CES. 2 www.irf.com AUIRGP35B60PD-E Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-247 MSL1 Class M4 (425V) AEC-Q101-002 Human Body Model Class H2 (4000V) AEC-Q101-001 Charged Device Model Class C5 (1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 70 350 60 300 50 250 40 200 Ptot (W) IC (A) AUIRGP35B60PD-E 30 150 20 100 10 50 0 0 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 T C (C) T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 70 1000 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 IC A) ICE (A) 100 10 40 30 20 10 0 1 10 100 0 1000 1 2 VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150C; VGE =15V 5 70 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 40 ICE (A) ICE (A) 4 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s 70 30 40 30 20 20 10 10 0 0 0 1 2 3 4 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 4 3 VCE (V) 5 0 1 2 3 4 5 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s www.irf.com AUIRGP35B60PD-E 800 10 700 600 T J = 25C 9 T J = 125C 8 7 VCE (V) ICE (A) 500 400 300 ICE = 11A 6 ICE = 22A 5 ICE = 35A 4 200 TJ = 125C 3 100 T J = 25C 2 0 1 0 5 10 15 20 0 5 VGE (V) 10 15 20 VGE (V) Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s Fig. 8 - Typical VCE vs. VGE TJ = 25C 10 100 9 F InstantaneousF orw ardC urrent -I (A ) 8 VCE (V) 7 ICE = 11A 6 ICE = 22A 5 ICE = 35A 4 3 10 TJ = 150C TJ = 125C TJ = 25C 2 1 0 5 10 15 1 0.8 20 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = 125C Fig. 10 - Typ. Diode Forward Characteristics tp = 80s 800 1000 700 EON Swiching Time (ns) Energy (J) 600 500 400 EOFF 300 200 td OFF 100 tdON tF 10 tR 100 0 1 0 5 10 15 20 25 30 35 40 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. www.irf.com Diode clamp used: 30ETH06 (See C.T.3) 0 10 20 30 40 IC (A) Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 5 AUIRGP35B60PD-E 800 1000 700 tdOFF EON Swiching Time (ns) Energy (J) 600 500 400 EOFF 300 100 tdON tF 10 200 tR 100 0 1 0 10 20 30 40 50 0 10 20 30 Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 50 Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 30 10000 Cies 25 Capacitance (pF) 20 Eoes (J) 40 RG ( ) RG () 15 10 1000 Coes 100 Cres 5 0 0 100 200 300 400 500 600 10 700 0 20 VCE (V) 40 60 80 100 VCE (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE 16 1.4 14 Normalized V CE(on) (V) 400V 12 VGE (V) 10 8 6 4 1.2 1.0 2 0 0.8 0 50 100 150 200 Q G , Total Gate Charge (nC) Fig. 17 - Typical Gate Charge vs. VGE ICE = 22A 6 -50 0 50 100 150 200 T J (C) Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 22A, VGE= 15V www.irf.com AUIRGP35B60PD-E 100 100 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/s) 1 100 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/s) 1000 Fig. 20 - Typical Recovery Current vs. dif/dt 800 1000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C di(rec)M/dt - (A/s) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.0A I F = 5.0A I F = 15A I F = 30A 200 0 100 di f /dt - (A/s) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt www.irf.com 100 100 di f /dt - (A/s) 1000 Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 7 AUIRGP35B60PD-E Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.01 0.01 0.02 J R1 R1 J 1 R2 R2 2 1 2 R3 R3 3 C 0.077 0.194 3 Ci= i/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) i (sec) 0.139 0.000257 0.001418 0.020178 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 J 0.01 0.02 R1 R1 J 1 1 R2 R2 2 2 Ci= i/Ri Ci i/Ri 0.01 R3 R3 3 C 3 Ri (C/W) i (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com AUIRGP35B60PD-E L L VCC DUT 0 80 V DUT 480V Rg 1K Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode R= DUT / DRIVER VCC DUT Rg VCC ICM VCC Rg Fig.C.T.4 - Resistive Load Circuit Fig.C.T.3 - Switching Loss Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit www.irf.com 9 AUIRGP35B60PD-E 45 450 400 40 400 tf 300 90% ICE 200 350 30 300 20 5% VCE 150 15 100 5% ICE 50 0 -50 -0.20 Eoff Loss 0.00 0.20 0.40 30 25 90% test current 5 50 0 0 20 10% test current 150 100 35 tr 200 10 -5 0.80 0.60 40 TEST CURRENT 250 25 VCE (V) VCE (V) 250 35 ICE (A) 350 45 15 ICE (A) 450 10 5% VCE 5 0 Eon Loss -50 9.00 9.20 Time(s) 9.40 -5 9.60 Time (s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3 3 trr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. WF3 - Reverse Recovery Waveform and Definitions 10 www.irf.com AUIRGP35B60PD-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number 35B60PD-E YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRGP35B60PD-E Ordering Information 12 Base part number Package Type Standard Pack AUIRGP35B60PD-E TO-247 Form Tube Complete Part Number Quantity 25 AUIRGP35B60PD-E www.irf.com AUIRGP35B60PD-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. 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