WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
AUIRGP35B60PD-E
01/11/10
Features
•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability
•Lead-Free, RoHS Compliant
•Automotive Qualified*
Benefits
•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150KHz
Applications
•PFC and ZVS SMPS Circuits
•DC/DC Converter Charger
1www.irf.com
PD - 97619
AUTOMOTIVE GRADE
GC E
Gate Collector Emitter
TO-247AD
AUIRGP35B60PD-E
GC
E
C
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84mΩ
ID (FET equivalent) = 35A
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 60
I
C
@ T
C
= 100°C Continuous Collector Current 34
I
CM
Pulse Collector Current (Ref. Fig. C.T.4) 120
I
LM
Clamped Inductive Load Current
d
120 A
I
F
@ T
C
= 25°C Diode Continous Forward Current 40
I
F
@ T
C
= 100°C Diode Continous Forward Current 15
I
FRM
Maximum Repetitive Forward Current
e
60
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 308 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 123
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.41 °C/W
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
R
θCS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
R
θJA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
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Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.78—V/°C
VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω1MHz, Open Collector
—1.852.15 IC = 22A, VGE = 15V 4, 5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage — 2.25 2.55 V IC = 35A, VGE = 15V
—2.372.80 IC = 22A, VGE = 15V, TJ = 125°C
—3.003.45 IC = 35A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 36 — S VCE = 50V, IC = 22A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 3.0 375 µA VGE = 0V, VCE = 600V
—0.35—mA
VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10
—1.201.60 IF = 15A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
Qg Total Gate Charge (turn-on) — 160 240 IC = 22A 17
Qgc Gate-to-Collector Charge (turn-on) — 55 83 nC VCC = 400V CT1
Qge Gate-to-Emitter Charge (turn-on) — 21 32 VGE = 15V
Eon Turn-On Switching Loss — 220 270 IC = 22A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 215 265 µJ VGE = +15V, RG = 3.3Ω, L = 200µH
Etotal Total Switching Loss — 435 535 TJ = 25°C
f
td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3
trRise time — 6.0 8.0 ns VGE = +15V, RG = 3.3Ω, L = 200µH
td(off) Turn-Off delay time — 110 122 TJ = 25°C
f
tfFall time — 8.0 10
Eon Turn-On Switching Loss — 410 465 IC = 22A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 330 405 µJ VGE = +15V, RG = 3.3Ω, L = 200µH 11,13
Etotal Total Switching Loss — 740 870 TJ = 125°C
f
WF1,WF2
td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3
trRise time — 8.0 11 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14
td(off) Turn-Off delay time — 130 150 TJ = 125°C
f
WF1,WF2
tfFall time — 12 16
Cies Input Capacitance — 3715 — VGE = 0V 16
Coes Output Capacitance — 265 — VCC = 30V
Cres Reverse Transfer Capacitance — 47 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related)
g
—135— VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Ener
gy
Related)
g
—179—
TJ = 150°C, IC = 120A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 22Ω, VGE = +15V to 0V
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19
—74120 TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21
— 220 600 TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22
—6.510 TJ = 125°C di/dt = 200A/µs CT5
Conditions
AUIRGP35B60PD-E
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
Qualification Information
†
TO-247 MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
Charged Device Model Class C5 (1125V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4 (425V)
†††
AEC-Q101-002
Human Body Model Class H2 (4000V)
†††
AEC-Q101-001
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
0 20 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
IC (A)
10 100 1000
VCE (V)
1
10
100
1000
IC A)
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345
VCE (V)
0
10
20
30
40
50
60
70
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
Ptot (W)
AUIRGP35B60PD-E
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Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
0 5 10 15 20
VGE (V)
0
100
200
300
400
500
600
700
800
ICE (A)
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 11A
ICE = 22A
ICE = 35A
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 11A
ICE = 22A
ICE = 35A
0 5 10 15 20 25 30 35 40
IC (A)
0
100
200
300
400
500
600
700
800
Energy (µJ)
EOFF
EON
010 20 30 40
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
I nstantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
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Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 22A
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 22A, VGE= 15V
-50 0 50 100 150 200
TJ (°C)
0.8
1.0
1.2
1.4
Normalized VCE(on) (V)
010 20 30 40 50
RG (Ω)
0
100
200
300
400
500
600
700
800
Energy (µJ)
EON
EOFF
010 20 30 40 50
RG (Ω)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 50 100 150 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
400V
0 100 200 300 400 500 600 700
VCE (V)
0
5
10
15
20
25
30
Eoes (µJ)
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Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
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Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.363 0.000112
0.864 0.001184
0.473 0.032264
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.139 0.000257
0.077 0.001418
0.194 0.020178
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
80 V DUT
480V
1K
VCC
DUT
0
L
Fig.C.T.4 - Resistive Load Circuit
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.3 - Switching Loss Circuit
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
PFC diode L
Rg
VCC
DUT /
DRIVER
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
-50
0
50
100
150
200
250
300
350
400
450
9.00 9.20 9.40 9.60
Time (µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
40
45
I
CE
(A)
TEST CURRENT
90% test current
5% VCE
10% test current
Eon Loss
tr
-50
0
50
100
150
200
250
300
350
400
450
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
35
40
45
I
CE
(A)
90% ICE
5% VCE
5% ICE
Eoff Loss
tf
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TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
35B60PD-E
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
AUIRGP35B60PD-E
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Ordering Information
Base part number Package Type Standard Pack Complete Part Number
Form Quantit
y
AUIRGP35B60PD-E TO-247 Tube 25 AUIRGP35B60PD-E
AUIRGP35B60PD-E
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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product
or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of
order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
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