Phototransistors phototransistors Features * Low-cost visible and near-IR photodetection * Available with gains from 100 to over 1500 * Moderately fast response times * Available in a wide range of packages including epoxy-coated, transfer-molded, cast, hermetic packages, chip form and surface mounting technology * Usable with almost any visible or near-infrared light source such as IREDs, neon, fluorescent, incandescent bulbs, lasers, flame sources, sunlight, etc. * Same general electrical characteristics as familiar signal transistors Typical Applications * Computer/business equipment * Write-protect control * Margin controls--printers * Industrial * LED light source--light pens * Security systems * Safety shields * Consumer * Coin counters * Lottery card readers * Position sensors--joysticks * Remote controllers--toys, appliances, audio/visual equipment * Games--laser tag * Camera shutter control Principle of Operation Phototransistors are solid-state light detectors that possess internal gain. They can be used to provide either an analog or digital output signal. Description Phototransistors are photodiode-amplifier combinations integrated within a single silicon chip. These are combined to overcome the major fault of photodiodes: unity gain. Many applications demand a greater output signal from the photodetector than can be generated by a photodiode alone. While the signal from a photodiode can always be amplified through use of an external op-amp or other circuitry, this approach is often not as practical or as cost-effective as the use of phototransistors. The phototransistor can be viewed as a photodiode whose output photocurrent is fed into the base of a conventional small-signal transistor. While not required for operation of the device as a photodetector, a base connection is often provided, allowing the designer the option of using base current to bias the transistor. The typical gain of a phototransistor can range from 100 to over 1500. Phototransistors can be used as ambient-light detectors. When used with a controllable light source, typically an IRED, they are often employed as the detector element for optoisolators and transmissive or reflective optical switches. All phototransistors are RoHS compliant. Absolute Maximum Ratings Maximum Temperatures -25C to 80C (CR10TE, CR50TE) Storage and Operating: -40C to 100C -40C to 110C (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) -40C to 85C (VTT7222, VTT7223, VTT7225, VTT7122, VTT7123, and VTT7125) -40C to 70C (VTT9002, VTT9003, VTT9102, and VTT9103) Continuous Power Dissipation: 50 mW 100 mW (VTT9002, VTT9003, VTT9102, and VTT9103) 200 mW (CR10TE, CR50TE) 250 mW (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Derate above 30C: 0.71 mW/C 2.5 mW/C (VTT9002, VTT9003, VTT9102, and VTT9103) 3.12 mW/C (VTT1015, VTT1016, VTT1017, Datasheets available upon request. VTT1115, VTT1116, and VTT1117) 0.91 mW/C (VTT7122, VTT7123, VTT7125) Maximum Current: 25 mA 200 mA (VTT1015, VTT1016, VTT1017, VTT1115, VTT1116, and VTT1117) Lead-Soldering Temperature: 260C (1.6 mm from case, 5 sec. max.) www.optoelectronics.perkinelmer.com 19 phototransistors .025'' x .025'' NPN Phototransistors Technical Specification Part Number NPN Phototransistors 0.25", small area, high speed 0.04", medium area, high sensitivity 0.05", large area, high sensitivity Table Key IC ICEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF Light Current Dark Current H=0 Collector Breakdown IC=100 A, H=0 Emitter Breakdown IE=100 A, H=0 Saturation Voltage IC=1 mA, H=400 fc Rise/Fall Time IC=1 mA, RL=100 Light Current H fc (mW/cm2) mA min. V CE =5 V Dark Current nA V CE max. Volts V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 VTT1222WH 1.9 100 (5) 10 20 50 6 0.25 2 40 VTT1223WH 1.5 100 (5) 10 20 40 6 0.25 3 40 VTT1225H 4 100 (5) 100 10 30 5 0.25 1.5 5 VTT1226H 7.5 100 (5) 100 10 30 5 0.25 3 5 VTT1227H 12 100 (5) 100 10 30 5 0.25 4 5 VTT1322WH 0.8 100 (5) 10 20 50 6 0.25 2 40 VTT1323WH 1 100 (5) 10 20 40 6 0.25 3 40 VTT3122EH 1.2 100 (5) 100 20 40 6 0.25 2.5 8 VTT3123EH 4 100 (5) 100 10 30 4 0.25 4 8 VTT3323LAH 2 20 (1) 100 10 30 5 0.25 3 10 VTT3324LAH 4 20 (1) 100 10 30 5 0.25 4 10 VTT3325LAH 6 20 (1) 100 10 30 5 0.25 5 10 VTT3423LAH 1 20 (1) 100 10 30 5 0.25 3 10 VTT3424LAH 2 20 (1) 100 10 30 5 0.25 4 10 VTT3425LAH 3 20 (1) 100 10 30 5 0.25 5 10 VTT7122H 1 100 (5) 100 10 30 5 0.25 2 36 VTT7123H 2 100 (5) 100 10 30 5 0.25 2 36 VTT7125H 4.5 100 (5) 100 10 30 5 0.25 2 36 VTT7222H 0.9 100 (5) 100 10 30 5 0.25 2 36 VTT7223H 1.8 100 (5) 100 10 30 5 0.25 2 36 VTT7225H 4 100 (5) 100 10 30 5 0.25 4 36 V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 10 Electro-Optical Characteristics @ 25C Clear T- 1 3/4 (5 mm) Plastic Package VTT1212 VTT1223W VTT1227 VTT1214 VTT1225 VTT1222W VTT1226 IRT T-1 3/4 (5mm) Plastic Package VTT1322W VTT1312 VTT1323W VTT1314 .04'' x .04'' NPN Phototransistors Technical Specification Part Number Light Current H fc (mW/cm2) V CE =5 V mA min. Dark Current nA V CE Volts max. VTT1212H 2 20 (1) 100 10 30 5 0.25 4 VTT1214H 4 20 (1) 100 10 30 5 0.25 6 10 VTT1312H 1 20 (1) 100 10 30 5 0.25 4 10 Coax Hermetic (with case lead) VTT3123E VTT3122E VTT1314H 2.4 20 (1) 100 10 30 5 0.25 6 10 VTT9002H 2 100 (5) 100 10 30 6 0.55 4 50 Clear Long T- 1 (3 mm) Plastic Package VTT3323LA VTT3324LA VTT3325LA VTT9003H 5 100 (5) 100 10 30 6 0.55 6 50 VTT9102H 6 100 (5) 100 5 30 4 0.55 6 42 IRT Long T- 1 (3 mm) Plastic Package VTT3423LA VTT3424LA VTT3425LA VTT9103H 13 100 (5) 100 5 30 4 0.55 10 42 Electro-Optical Characteristics @ 25C Molded, Lensed Lateral Package VTT7122 VTT7123 VTT7125 IRT Molded, Lensed Lateral Package VTT7222 VTT7223 VTT7225 Clear Epoxy TO-106 Ceramic Package VTT9002 VTT9003 Epoxy Lensed TO-106 Ceramic Package VTT9103 VTT9102 20 www.optoelectronics.perkinelmer.com Phototransistors TO-46 Flat Window Package VTT1015 VTT1016 VTT1017 TO-46 Lensed Package VTT1115 VTT1116 .05'' x .05'' NPN Phototransistors Technical Specification Table Key IC ICEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF Light Current Dark Current H=0 Collector Breakdown IC=100 A, H=0 Emitter Breakdown IE=100 A, H=0 Saturation Voltage IC=1 mA, H=400 fc Rise/Fall Time IC=1 mA, RL=100 Light Current H fc (mW/cm2) mA min. V CE =5 V Part Number VTT1117 Dark Current nA V CE max. Volts V BR(CEO) Volts min. V BR(ECO) Volts min. V CE(SAT) Volts max. t R /t F sec, typ. Angular Response 1/2 VTT1015H 0.4 100 (5) 25 20 40 6 0.4 5 35 VTT1016H 1 100 (5) 25 20 30 6 0.4 5 35 VTT1017H 2.5 100 (5) 25 10 20 4 0.4 8 35 VTT1115H 1 20 (1) 100 10 30 6 0.4 5 15 VTT1116H 2 20 (1) 100 10 30 4 0.4 8 15 VTT1117H 4 20 (1) 100 10 30 4 0.4 8 15 Electro-Optical Characteristics @ 25C I Technical Specification Part Number CR10TE CR50TE Package* Ceramic Spectral Range Peak Sensitivity Wavelength Vce (nm) (V) P-Current Dark Current (nA) Active Area (mm2) Rise/Fall Time Orientation 400-1070 850 40 3 400 0.19 10/10 High Vce 400-1070 850 40 3 400 0.19 10/10 High Vce SMD (A1) Ceramic SMD (A2) * All packages are listed on our website. CR10TE * Surface mounting device * Solid state ceramic chip * High thermal conductivity * Special type (CR10TE-DLF) with daylight filter on request www.optoelectronics.perkinelmer.com 21