AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability Lead-Free, RoHS Compliant Automotive Qualified * C VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A E Equivalent MOSFET Parameters RCE(on) typ. = 84m ID (FET equivalent) = 35A G n-channel C Applications PFC and ZVS SMPS Circuits DC/DC Converter Charger G Base Part Number Package Type AUIRGP35B60PD TO-247AC E TO-247AC AUIRGP35B60PD Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz C G Gate C Collector Standard Pack Form Quantity Tube 25 E Emitter Orderable Part Number AUIRGP35B60PD Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 25C IF @ TC = 100C IFSM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C. T.4) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 60 34 120 120 40 15 60 20 308 123 -55 to +150 Units V A V W C 300 (0.063 in.(1.6mm) from case) 10 lbf*in (1.1 N*m) Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter Thermal Resistance Junction-to-Case (each IGBT) Thermal Resistance Junction-to-Case (each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 6.0(0.21) Max. 0.41 1.7 --- 40 --- Units C/W g(oz) * Qualification standards can be found at www.infineon.com 1 2017-08-24 AUIRGP35B60PD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage Internal Gate Resistance RG VCE(on) VGE(th) VGE(th)/TJ gfe ICES Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current 600 -- -- -- -- -- -- 3.0 -- -- -- -- -- -- -- -- 0.78 1.7 1.85 2.25 2.37 3.00 4.0 -10 36 3.0 0.35 1.30 1.20 -- Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge (turn-on) -- 160 Qge Gate-to-Emitter Charge (turn-on) -- 55 Gate-to-Collector Charge (turn-on) -- 21 Qgc Eon Turn-On Switching Loss -- 220 Turn-Off Switching Loss -- 215 Eoff Total Switching Loss -- 435 Etotal td(on) Turn-On delay time -- 26 tr Rise time -- 6.0 Turn-Off delay time -- 110 td(off) Ref. Fig. Max. Units Conditions 240 IC = 22A 83 nC VGE = 15V VCC = 400V 32 270 265 J IC = 22A, VCC = 390V, 535 VGE = +15V, 34 ns RG = 3.3, L = 200H, 8.0 TJ = 25C 122 Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Effective Output Capacitance (Energy Related) -- -- -- -- -- -- -- -- -- -- -- -- -- RBSOA Reverse Bias Safe Operating Area FULL SQUARE trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Irr Peak Reverse Recovery Current 42 74 80 220 4.0 6.5 Conditions -- V VGE = 0V, IC = 500A -- V/C VGE = 0V, IC = 1mA (25C-125C) -- 1MHz, Open Collector 4,5,6,8,9 2.15 IC = 22A, VGE = 15V 2.55 IC = 35A, VGE = 15V V 2.80 IC = 22A, VGE = 15V, TJ = 125C 3.45 IC = 35A, VGE = 15V, TJ = 125C 5.0 V IC = 250A 7,8,9 -- mV/C VCE = VGE, IC = 1.0mA -- S VCE = 50V, IC = 22A,PW = 80s 375 A VGE = 0V, VCE = 600V -- mA VGE = 0V, VCE = 600V,TJ = 125C 1.70 IF = 15A V 10 1.60 IF = 15A, TJ = 125C 100 nA VGE = 20V, VCE = 0V tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) -- -- -- -- -- -- 8.0 410 330 740 26 8.0 130 12 3715 265 47 135 179 Max. Units 10 465 405 870 34 11 150 16 -- -- -- -- -- 60 120 180 600 6.0 10 Ref. Fig. 17 CT1 CT3 CT3 11,13 WF1,WF2 J ns pF IC = 22A, VCC = 390V, VGE = +15V, RG = 3.3, L = 200H, TJ = 125C CT3 12,14 WF1,WF2 VGE = 0V VCC = 30V f = 1.0Mhz 16 15 VGE = 0V, VCE = 0V to 480V ns nC A TJ = 150C, IC = 120A VCC = 480V, Vp 600V Rg = 22, VGE = +15V to 0V TJ = 25C TJ = 125C I = 15A, TJ = 25C F VR = 200V, TJ = 125C di/dt = 200A/s TJ = 25C TJ = 125C 3 CT2 19 21 19,20,21,22 CT5 Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 H, RG = 22 Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. 2 2017-08-24 AUIRGP35B60PD 350 70 300 60 250 Ptot (W) 50 IC (A) 40 30 200 150 100 20 50 10 0 0 0 20 40 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 T C (C) TC (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 70 1000 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 IC A) ICE (A) 100 10 40 30 20 10 0 1 10 100 0 1000 1 2 VCE (V) 5 70 70 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 60 50 40 ICE (A) ICE (A) 4 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 3 - Reverse Bias SOA TJ = 150C; VGE = 15V 30 40 30 20 20 10 10 0 0 0 1 2 3 VCE (V) 4 Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 3 3 VCE (V) 5 0 1 2 3 4 5 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s 2017-08-24 AUIRGP35B60PD 10 800 700 600 T J = 25C 9 T J = 125C 8 7 VCE (V) ICE (A) 500 400 300 ICE = 11A 6 ICE = 22A 5 ICE = 35A 4 200 3 T J = 125C 100 2 T J = 25C 1 0 0 5 10 15 0 20 5 10 15 20 VGE (V) VGE (V) Fig. 8 - Typical VCE vs. VGE TJ = 25C Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10s 10 100 9 F InstantaneousForw ardC urrent -I (A ) 8 VCE (V) 7 ICE = 11A 6 ICE = 22A 5 ICE = 35A 4 3 2 10 TJ = 150C TJ = 125C TJ = 25C 1 0 5 10 15 20 1 0.8 VGE (V) 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 9 - Typical VCE vs. VGE TJ = 125C Fig. 10 - Typ. Diode Forward Characteristics tp = 80s 800 1000 700 EON Swiching Time (ns) Energy (J) 600 500 400 EOFF 300 200 tdOFF 100 tdON tF 10 tR 100 0 0 5 10 15 20 25 30 35 40 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 4 1 0 10 20 30 40 IC (A) Fig. 12 - Typ. Switching Time vs. IC TJ = 125C; L = 200H; VCE = 390V, RG = 3.3; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 2017-08-24 AUIRGP35B60PD 800 1000 700 tdOFF EON Swiching Time (ns) Energy (J) 600 500 400 EOFF 300 100 tdON tF 10 tR 200 100 1 0 0 0 10 20 30 40 10 50 R G ( ) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 20 30 40 50 RG () Fig. 14 - Typ. Switching Time vs. RG TJ = 125C; L = 200H; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 10000 30 Cies 25 Capacitance (pF) Eoes (J) 20 15 10 1000 Coes 100 Cres 5 0 0 100 200 300 400 500 600 700 10 0 VCE (V) 20 40 60 80 100 VCE (V) Fig. 15 - Typ. Output Capacitance Stored Energy vs. VCE Fig. 16 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 16 1.4 14 Normalized V CE(on) (V) 400V 12 VGE (V) 10 8 6 4 1.2 1.0 2 0.8 0 0 50 100 150 Q G , Total Gate Charge (nC) Fig. 17 - Typical Gate Charge vs. VGE ICE = 22A 5 200 -50 0 50 100 150 200 T J (C) Fig. 18 Normalized Typ. VCE(on) vs. Junction Temperature IC = 22A, VGE= 15V 2017-08-24 AUIRGP35B60PD 100 100 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/s) 1 100 1000 di f /dt - (A/s) 1000 Fig. 20 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Reverse Recovery vs. dif/dt 1000 800 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C di(rec)M/dt - (A/s) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.0A I F = 5.0A I F = 15A I F = 30A 200 0 100 di f /dt - (A/s) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt 6 100 100 di f /dt - (A/s) 1000 Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 2017-08-24 AUIRGP35B60PD Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 R1 R1 0.05 0.01 J 0.01 0.02 J 1 R2 R2 R3 R3 C 2 1 3 2 Ri (C/W) i (sec) 0.139 0.000257 0.077 0.001418 0.194 0.020178 C 3 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 0.01 0.02 R1 R1 J 1 R2 R2 R3 R3 C 1 2 3 2 Ci= iRi Ci= iRi 0.01 3 C Ri (C/W) i (sec) 0.363 0.000112 0.864 0.001184 0.473 0.032264 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 2017-08-24 AUIRGP35B60PD L 80 V + - DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R = VCC ICM DUT VCC Rg Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit Fig.C.T.5 - Reverse Recovery Parameter Test Circuit 8 2017-08-24 AUIRGP35B60PD 400 tf 300 9 0 % IC E 200 400 35 350 30 300 25 20 5% V CE 150 15 100 5 % IC E 50 0 -5 0 -0 .2 0 40 E o ff L o s s 0 .0 0 0 .2 0 0 .4 0 0 .6 0 45 40 TEST CURRENT 9 0 % te s t c u rre n t 1 0 % te s t c u rre n t 150 100 5 50 0 0 -5 0 .8 0 25 200 10 35 30 tr 250 V C E (V ) V CE (V ) 250 450 I C E (A ) 350 45 20 15 I C E (A ) 450 10 5% V CE E on Loss -5 0 9 .0 0 9 .2 0 9 .4 0 5 0 -5 9 .6 0 T im e (s ) T im e ( s ) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25C using Fig. CT.3 Fig. WF3 - Reverse Recovery Waveform and Definitions 9 2017-08-24 AUIRGP35B60PD TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Part Number AUIRGP35B60PD YWWA IR Logo XX Date Code Y = Year WW = Work Week A = Automotive, Lead Free XX Lot Code TO-247AC package is not recommended for Surface Mount Application. 10 2017-08-24 AUIRGP35B60PD Qualification Information Automotive (per AEC-Q101) This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model TO-247 N/A Class M4(+/ 425V) AEC-Q101-002 Human Body Model ESD Class H2(+/ 4000V) AEC-Q101-001 Charged Device Model Class C5 (+/ 1125V) AEC-Q101-005 Yes RoHS Compliant Highest passing voltage. Revision History Date 8/24/2017 Comments Updated datasheet with corporate template Corrected typo Qual table -Moisture Sensitivity Level-from "MSL1" to N/A-page 11 Corrected part marking on pages 10 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2017-08-24