B40C800DM thru B380C800DM
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Revision: 19-Aug-11 1Document Number: 88533
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 0.9 A
VRRM 65 V to 600 V
IFSM 45 A
IR10 μA
VF1.0 V
TJ max. 125 °C
Case Style DFM
~
~
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM UNIT
Maximum repetitive peak reverse voltage VRRM 65 125 200 400 600 V
Maximum RMS input voltage R- and C-load VRMS 40 80 125 250 380 V
Maximum average forward
output current for free air
operation at TA = 45 °C
R- and L-load
C-load IF(AV)
0.9
0.8 A
Maximum DC blocking voltage VDC 65 125 200 400 600 V
Maximum peak working voltage VRWM 90 180 300 600 900 V
Maximum non-repetitive peak voltage VRSM 100 200 350 650 1000 V
Maximum repetitive peak forward surge current IFRM 10 A
Peak forward surge current single sine-wave on
rated load IFSM 45 A
Rating for fusing at TJ = 125 °C (t < 100 ms) I2t 10 A2s
Minimum series resistor C-load at VRMS = ± 10 % RT 1.0 2.0 4.0 8.0 12.0
Maximum load capacitance + 50 %
- 10 % CL5000 2500 1000 500 200 μF
Operating junction temperature range TJ- 40 to + 125 °C
Storage temperature range TSTG - 40 to + 150 °C
B40C800DM thru B380C800DM
www.vishay.com Vishay Semiconductors
Revision: 19-Aug-11 2Document Number: 88533
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Fig. 2 - Derating Curves Output Rectified Current for
B250C800D...B360C800DM
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM UNIT
Maximum instantaneous forward
voltage drop per diode 0.9 A VF1.0 V
Maximum reverse current at rated
repetitive peak voltage per diode IR10 μA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM UNIT
Typical thermal resistance (1) RJA
RJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRD PCKAGE CODE BASE QUANTITY DELIVERY MODE
B380C800DM-E3/45 0.416 45 50 Tube
20 40 60
0.2
0.4
0.6
0.8
1.0
80 100 120 140
0
0
0 - 10 µF
10 - 100 µF
> 100 µF
Capacitive Load
Mounted on P.C.B. with 0.06
"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51
"
(13 x 13 mm)
50 to 60 Hz
Resistive or Inductive Load
Ambient Temperature (°C)
Average Forward Output Current (A)
60 80 100 140
0
0.2
0.6
0.8
1.0
0.4
020 40 120
Capacitive Load
Mounted on P.C.B. with 0.06
"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51
"
(13 x 13 mm)
50 to 60 Hz
Resistive or Inductive Load
0 - 10 µF
10 - 100 µF
> 100 µF
Ambient Temperature (°C)
Average Forward Output Current (A)
B40C800DM thru B380C800DM
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Revision: 19-Aug-11 3Document Number: 88533
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Leakage Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
010 100
0
10
20
30
40
50
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
TJ = 125 °C
10 ms Single Sine-Wave
1.0 Cycle
0.4 0.8 1.2
10
1
0.1
0.01
0.6 1.0 1.4
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Surge Current (A)
020 40 60 80 100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 25 °C
110 100
1
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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