BDX33B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

  

. . . designed for general purpose and low speed switching applications.

•High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0

•Collector–Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B

VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C

•Low Collector–Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C

•Monolithic Construction with Build–In Base–Emitter Shunt resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BDX33B

BDX34B

ÎÎÎÎ

BDX33C

BDX34C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.25

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.56

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.78

ÎÎÎ

C/W

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BDX33B/D

 Motorola, Inc. 1995









DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

70 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB







REV 7

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2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0) BDX33B/BDX34B

BDX33C/BDX34C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0, RBE = 100) BDX33B/BDX34B

BDX33C/BDX33C

ÎÎÎÎ

VCER(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage1

(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc) BDX33B/BDX34B

BDX33C/BDX34C

ÎÎÎÎ

VCEX(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 1/2 rated VCEO, IB = 0) TC = 25

TC = 100

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = rated VCBO, IE = 0) TC = 25

TC = 100

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain1

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

ÎÎÎÎ

hFE

ÎÎÎÎ

750

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 6.0 mAdc) BDX33B, 33C/34B, 34C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 Adc, VCE = 3.0 Vdc) BDX33B, 33C/34B, 34C

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage

(IC = 8.0 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

4.0

ÎÎÎ

Vdc

1 Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

2 Pulse Test non repetitive: Pulse Width = 0.25 s.

   

Motorola Bipolar Power Transistor Device Data

Figure 1. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(t) = r(t) R

JC = 1.92

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

1.0

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10070

0.2

5.0 ms

1.0 ms

BDX33B

BDX33C

500

s100

TC = 25

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0

1.0

Figure 2. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.02 3.0 5.0 7.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

5.0 ms

1.0 ms

BDX34B

BDX34C

500

s100

TC = 25

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

0.05

0.1

2.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Fig. 3 is based on

TJ(pk) = 150

C; TC is variable depending on conditions. Se-

cond breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) = 150

C. TJ(pk) may be calculated from the

data in Fig. . At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

10,000

1.0

Figure 3. Small–Signal Current Gain

f, FREQUENCY (kHz)

10 2.0 5.0 10 20 50 100 200 1000

500

300

100

5000

hFE, SMALL–SIGNAL CURRENT GAIN

3000

200

500

2000

1000

300

0.1

Figure 4. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 5.0 20 10010

C, CAPACITANCE (pF)

200

100

TJ = 25

Cib

Cob

500.2 0.5

TJ = 25

VCE = 4.0 Vdc

IC = 3.0 Adc

PNP

NPN PNP

NPN

   

4 Motorola Bipolar Power Transistor Device Data

0.1

Figure 5. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 4.0 V

200 7.0

NPN

BDX33B, 33C PNP

BDX34B, 34C

20,000

5000

10,000

3000

2000

1000

3.0 5.0 0.1 IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 2.0 10

500

300

hFE, DC CURRENT GAIN

TJ = 150

–55

200 7.0

20,000

5000

10,000

3000

2000

1000

3.0 5.0

VCE = 4.0 V

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25

4.0 A 6.0 A

1.0 0.7 2010

3.0

IB, BASE CURRENT (mA)

0.3 0.5 1.0 2.0 3.0 5.0 7.0 30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25

4.0 A 6.0 A

1.0 0.7 2010

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 7. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25

0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 107.03.0 5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

6 Motorola Bipolar Power Transistor Device Data

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BDX33B/D

*BDX33B/D*

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