PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = 600 V 18 A 400 m 200 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M 600 V VGS Continuous 20 V VGSM Tranisent 30 V ID25 TC = 25C 18 A IDM TC = 25C, pulse width limited by TJM 54 A IAR TC = 25C 18 A EAR TC = 25C 30 mJ EAS TC = 25C 1.2 J IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/ns dv/dt Maximum Ratings TO-247 AD (IXFH) (TAB) PLUS220 (IXFV) TJ 150C, RG = 4 PD G TC = 25C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-247 PLUS220 & PLUS220SMD (TO-247) 360 W -55 ... +150 150 -55 ... +150 C C C 300 250 C C D PLUS220SMD (IXFV-PS) G 1.13/10 Nm/lb.in. 6 4 S VDSS VGS = 0 V, ID = 250 A VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values Min. Typ. Max. 600 3.0 V 5.0 V 100 nA 25 250 A A VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % 400 m z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z (c) 2005 IXYS All rights reserved D = Drain TAB = Drain Features z TJ = 125C D (TAB) g g G = Gate S = Source Symbol Test Conditions (TJ = 25C, unless otherwise specified) D (TAB) S Easy to mount Space savings High power density DS99390(04/05) IXFH 18N60P IXFV 18N60PS IXFV 18N60P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 13 18 S 3000 pF 250 pF Crss 32 pF td(on) 21 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 5 (External) 62 ns tf 22 ns Qg(on) 85 nC 21 nC 46 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.35 RthCK (TO-247, PLUS220) Source-Drain Diode 0.21 TO-247 AD (IXFH) Outline 1 K/W Symbol Test Conditions IS VGS = 0 V 18 A ISM Repetitive 54 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V t rr IF = 18A -di/dt = 100 A/s VR = 100V 200 ns Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2 Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC PLUS220 (IXFV) Outline E E1 A A1 L2 E1 D1 D L3 QRM 1.0 C PLUS220SMD (IXFV-PS) Outline E E1 A A1 L2 L1 L 3X b 2X e E1 c A2 Terminals: 1-Gate 2-Drain D L4 L L1 2X b e A A1 A2 b c D D1 E E1 e L L1 L2 L3 A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4 A3 L3 c A2 Terminals: 1-Gate 2-Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFV 18N60P Fig. 1. Output Characteristics Fig. 2. Output Characteristics @ 25C @ 125C 40 18 35 8V 7V 8V 7V 30 12 I D - Amperes 14 I D - Amperes VGS = 10V VGS = 10V 16 6V 10 8 6 5V 4 25 20 6V 15 10 5V 5 2 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 V D S - Volts 15 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125C 3.1 18 VGS = 10V 16 VGS = 10V 2.8 7V 12 R D S ( o n ) - Normalized 14 I D - Amperes 12 V D S - Volts Fig. 3. Output Characteristics 6V 10 8 5V 6 4 2.5 2.2 I D = 18A 1.9 1.6 I D = 9A 1.3 1 0.7 2 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V D S - Volts Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.2 20 3 18 VGS = 10V TJ = 125 C 2.8 16 2.6 14 2.4 I D - Amperes R D S ( o n ) - Normalized IXFH 18N60P IXFV 18N60PS 2.2 2 1.8 1.6 12 10 8 6 1.4 4 1.2 TJ = 25 C 1 2 0.8 0 0 5 10 15 20 25 I D - Amperes (c) 2005 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFV 18N60P Fig. 8. Transconductance 30 27 27 24 24 21 21 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 18 15 TJ = 125 C 12 25 C 9 TJ = -40 C 25 C 125 C 18 15 12 9 -40 C 6 6 3 3 0 0 3.5 4 4.5 5 5.5 6 0 6.5 3 6 9 12 15 18 21 24 27 30 40 45 50 I D - Amperes V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 60 9 50 40 VG S - Volts I S - Amperes IXTH 18N60P IXFV 18N60PS 30 TJ = 125 C 20 VDS = 300V 8 I D = 9A 7 I G = 10mA 6 5 4 3 TJ = 25 C 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 5 10 V S D - Volts 15 20 25 30 35 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz R DS(on) Limit I D - Amperes Capacitance - picoFarads C iss 1000 C oss 25s 10 100s 1ms 100 C rss TJ = 150C 10ms DC TC = 25C 10 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFV 18N60P IXFH 18N60P IXFV 18N60PS Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - C / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds (c) 2005 IXYS All rights reserved 100 1000