98
.025" NPN Phototransistors
IRT Molded Lensed Lateral Package VTT7222, 7223, 7225
PACKAGE DIMENSIONS inch (mm)
CASE 7 LATERAL
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
moun t ed i n a 3 mm di am eter, lens ed, end loo ki ng, p l asti c
package. The package material transmits infrared and
blocks visible light. These devices are spectrally and
mecha nicall y ma t che d to the VTE7 17x se r ies of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
M axi mum Tem p er atur es
St or age Temperature: -4 0°C to 85°C
Operat i n g Temp er ature: -4 0°C to 85°C
Co nt i nuous Power Diss i pat io n: 50 mW
Derate above 30°C: 0.71 mW/°C
M axi mum Cur r ent : 2 5 mA
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPT ICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92).
Refer to General Product Notes, page 2.
Par t Num ber
Light Current Dark Current Collector
Breakdown Emitter
Breakdown Saturation
Voltage Rise/Fall Time
Angular
Response θ1/2
lClCEO VBR(CEO) VBR(ECO) VCE(SAT) tR/tF
mA H
fc (mW/cm2)
VCE = 5.0 V
H = 0 lC = 100 µA
H = 0 lE = 100 µA
H = 0 lC = 1.0 mA
H = 400 fc lC = 1.0 mA
RL = 100 Ω
Min. Max. (nA)
Max. VCE
(Volts) Volt s, M in. Volts, Min. Volts, M a x. µ sec, Ty p. Typ.
VTT7222 0.9 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7223 1.8 — 100 (5) 100 10 30 5.0 0.25 2.0 ±36°
VTT7225 4.0 — 100 (5) 100 10 30 5.0 0.25 4.0 ±36°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
