SANYO SEMICONDUCTOR CORP cece D MM 7997076 OOO7OL4 9 mm ATOY T-33-17 4 4 T-33-O7 PNP/NPN Epitaxial Planar ; 2044 Silicon Transistors High-Voltage Switching Applications 2510A Applications + Power supplies, relay drivers, lamp drivers Features - Adoption of FBET, MBIT processes High breakdown voltage and large current capacity . Fast switching speed Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact ( ): 2841592 Absolute Maximum Ratings at Ta=25C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction Temperature Storage Temperature Vogo yCEO EBO ic Pg Tj Tstg Electrical Characteristics at Ta=25C Collector Cutoff Current Topo Emitter Cutoff Current Teno DC Current Gain bpp Gain-Bandwidth Product fp Output Capacitance Cop unit (=) 120 (=) 100 (=)6 (-)1 (-)2 0.8 10 150 -55 to +150 Te=25C o QOAOLZr> pada min typ max unit Vope(-) 100V,I,=0 (-)100 nA Vp=(-)4V,Ip20 (-)100 nA Vog=(-)5V,Ig=(-)100mA 100# 400# Vop=(-) 10V,1p=(-) 100mA 120 MHz Vopz(-) 10V, f= 1MHz (13) pF 5 Continued on next page. #:; The 28A1592/2SC4134 are classified by 100mA hpp as follows: 100 R 200 | 140 Ss 280 200 T 400 | Case Outline 2044 (unit: mm) 6.5 ic-23 22 2 rr OS 9 ae} lg qo tb os-oliet| BE 0.85 3 s 12 05 BCceE B: Base C: Collector f= E; Emitter 23feoet-23 SANYO: TP-FA 8219MO/4097TA,TS No.2510-1/4 317 MnSANYO SEMICONDUCTOR CORP ec D Ml 7997076 OOO70LS O 2$A1592/25C4134 1-33-17 1-33-07 Continued from preceding page. . min typ max unit C-E Saturation Voltage Vop(sat) Ig=(-)400mA, Ip=(-)40mA (-0.2)(-0.6). 0.1 0.4 Vv B-E Saturation Voltage Vpg(gat) I=(-)4OOmA,Ig=(-)4OmA (~)0.85(-)1.2 V C-B Breakdown Voltage V(prycpo Ig=(-) 10uA, 1,=0 (=)120 Vv C-E Breakdown Voltage V(BR)CEO Iq=(=) 1mA , Rpp=co (=) 100 Vv E-B Breakdown Voltage (BR)EBO Tp=(-) 10uA,I,=0 (=)6 v Turn-on Time on See specified Test Circuit. (80) ns . of 0 ns Storage Time tstg tt (700) ns " 850 ns Fall Time te tt (40) ns " 50 ns Switching Time Test Circuit PWs20us _[81 nee so 1% INPUT 50 x oe + 100u ~Sv 10lgt =-10lg=ig = 400mA Ic - V -1.0 c CE 1.0 < = ' 1 -0.8 0.8 o f 4 A 2 # -0.6 9 0-6 : : q . 04 & 0-4 4 -0.2 ot 0.2 3 8 o 0 BF 0 0 -1 -2 -3 <4 <5 Collector to Emitter Voltage,Vop ~ Vv Ic - Vv ~500 c cE 500 ' 2S8A1592 a B 200 a 400 ' 0 re HA wp 300 300} g F A 3 o 8 ~200 t 200 be 8 5 9 100 4 8 - rt 100 a 8 8 t 0 -40 0 -19 ~ 2 ~30 Collector to Emitter Voltage, Vor - V -50 Sov (For PNP, the polarity is reversed.) [B= 0 i 2 3 4 5 Collector to Emitter Voltage,Vop - V Tc - VCE 0 2804134 4. Ta=0 20 Collector to Emitter Voltage, Vop = v 10 30 40 so 318SANYO SEMICONDUCTOR CORP 2ecE D MM 7997076 OOO70b6b 2 Base to Emitter Saturation Collector to Emitter Saturation Voltages Vop(sat) ~- nV J-33-17 25A1592/2S8C4134 T-33-07 4a Ic - VBE 12 Ic = VBE | | | 2Sai592 "2804134 i i : J =< = < ~1.0 I i Vce=-5V 1.0 Vce=5V : : | a | hI H : : rod > 43 -0-8++ ' 4 Hi 0.8 a F r t 8 | ell [| B -06 {Pak 5 0.6 o Dot RY infin 5 2 th Lo; ot Hn NN Ria S 8-04 8 & 0.4 HEINE oy 9 I & > v , Q j . 9 Ew a 0.2 mt 0.2 oO 7Y: vO. 8 y 8 J 3 AS) 3 SA 0 -0.2 +04 -06 -08 -1.0 4.2 0 0.2 0.6 0.6 8 0 1.2 Base to Emitter Voltage, Vpp -~V Base to Emitter Voltage, Var -V 000 hee - Ic 000 hFe - Ic SAI VceEs-SV DC Current Gain, hp, 8 -04 -1.0 Collector Current,I, - 4 10 Vee(sat) - Ic SA159 * Ic/ 1B=10 > i 2 a 2 A) o 70 a ay 9 ta 1.0 -0.01 -0.4 - Collector Current,I - A VcE(sat) - I A Ic/ PB=10 ~1000 1 nv; 0.01 ~1.0 -04 Collector Current,I - A DC Current Gain, bpp 8 of 4.0 Collector Current ,Ig -A Vee(sat) - I : c41 tT Ic/ Le=i0 Base to Emitter Saturation & Voltages Ven(sat) -v 0.1 {.0 Collector Current ,Ig -~A VcE(sat) - I $C4134 Ic/ 18210 8 i Taz7 C. 2 | Collector to Emitter Saturation Voltage Vor(sat) - nv 25 0.01 1.0 0.1 Collector Current,I - A 319SANYO SEMICONDUCTOR CORP ecE D MM 7997076 QOO70L7 4 mm 2SA1592/2SC4134 T-33-17 T-33-07 4 ft - Ic 10 cob - VcB a | 2$A1592/28C4134 28A1592/2804134 ea Vce=10v te f=1kHz & Pi | | ~ 1 [ I 2 30 23 noo BS e 3 7 S ie 8 E | [ees \ 3 3 \ 3 10 3 o aA 4 o 3 8 i : ss 4 & 3 & 10 (For PNP, minus sign is omitted.) (For PNP, minus s is omitted. oot 2 2 F 7 of 2 3 5 7 Qo 1.0 (0 100 Collector Current,I, = A Collector to Base Voltage,Vo, - ASO 0 ; Pc - Ta = | |2sais92as2sc4134 * 1.0 ' 10 ! i] . o t ar N\ H 3 dy! > 3 Nv ~~a 8 9. a 2 NS a ae , 5 a igo, a 6 4) 6 of a ey wa o, B . % | To=x25C * 2 4 Single pulse 9 3 2$A1592/2864134 a2 S 0.01}(For PNP, minus sign 8 8 No heat sink NX is omit a4 Cc Nw 1.0 10 100 _ 0 20 40 60 80 100 {20 140 160 Collector to Emitter Voltage,Vop - V Ambient Temperature,Ta - % 320SANYO SEMICONDUCTOR CORP 1 ecE D MM 7997076 OOOb784 5S me T-U-2O CASE OUTLINES OF SURFACE MOUNT TRANSISTORS @No marking is indicated. @All of Sanyo surface mount transistor case outlines are illustrated below. @All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. Case Outline[2018A] unit: mm in an a at koe) h- 2.9 __| f f.1->] C: Collector mon B: Base (] i E: Emitter 1! ee ee 2:4 SANYO: CP Case Outline(2038] unit: mm ree = 25 sh: 0.4 E; Emitter Cot B: Base SANYO: PCP Case Outline[2024A] unit: mm an 8] jo E " + 29 [hoe S: Source G: Gate ol tt Hi D: Drain 04 SANYO: CP Case Outline-[2044] unit: mm 6S phe a 1 2 cel ac E B: Base C: Collector =H E; Emitter 2afeobet-23 sanvo: TP-FA Case Outline[2028A] unit: mm iii. a e ql 035. | t 5 o D: Drain q J G: Gate S$: Source 1,7 1.27 SANYO: DP6B Case Outline[2046] unit: mm 0.6 3-04 0.16 rts ae s , T ) | 90.1 + Mw nw Gor | o2 | w 095 A958 |o 2.8 S : Source D: Drain $ O83 G2: Gate 2 i iS Gl: Gate 1 Case Outline[2030A] unit: mm K6.0- gc fl Ao | r -| 3 2 ; 8 y jl ai < QS. & 8 E: Emitter a g C: Collector = B: Base a? hat SANYO : DP6B Case Outline~[{2050] unit: mm 4 ote G T 5 I all.o-01 4 rN aol Sef 10.8 1 1.104 os . G: Gate (| | S: Source +t D: Drain ta a 06 SANYO: CP 37SANYO SEMICONDUCTOR CORP 22 D MM 7997076 OOOL74S 7 ml ted tain, Kat lila eC A ye Fae od Fann rus 2 ei dla a aiad aM AE te a Case Outline[2057] unit: mm rl a] Bie + -Eia -& ; Source pege fs | 1 H D: Drain wo} 0-3 SANYO: MCP Case Outline~ [2066] unit: mm 7- 9] 240 0-95, 0.55 3 vat 3 16 2-8 Of Gl: C2 + cs Collector 1 Collector 2 B2 : Base? EC +: EmitterCommon Bi ; Basel 2.9 raat SANYO + CPS Case Outline[2058] unit: mm 9.425, ag G: Gate S: Source r D: Drain Pee eee +03 a ayy Sey cn! 1 1 PA.-t ad a 1% aLlelleays PO 1 gr: Emittert ete | (OBL i Bint C2 =; Collector? 2.9 E2 ; Emitter2 Case Outline[2059] unit: mm 2.525 a ae bed B;: Base Cs: Collector d E: Emitter gig SANYO: MCP +423 Case Outline[2068] unit: mm og ae efflomled 26 El : Emitter] E2 : Emitter2 : Base2 C2 : Collector 2 s Basel Cl : Collector 1 {--}{=4 | SANYO : CPS Case Outline[2062] unit: mm goo S: Source Gi Gate SANYO: PCP Case Outline[2069] unit: mm R.2 45 eS Oo IIo | % 7 as SE B: Base C: Collector Pi & E: Enitter LJ) SANYO; SMP 2.55 2.55 Case Outline[2065] unit: mm 49 an 4 ot -as-+| be 0.8--4 2.9 - inal S: Source (| D: Drain Tad G: Gate t SANYO: CP t 3 =< i lL oso1 Case Outline-[2070) unit: mm o K O~0-1 ao a " Te 2G] a . oe : pees i ge Gea 29 D2: Drain? SC: Sourse Common D1: Draint [tert SANYO: CPs tr TTsi= tS 38SANYO SEMICONDUCTOR CORP mm 75997076 OOOb76b 7 Case Outline[2071] unit: mm OS Tr (is | Sel 4.0 Hf Tp 4.0 1.78 49 1. 4.0 G: Gate $ | S: Source i [2 D: Drain T-9) 220 Case Outline[2072] unit: mm 08 i (x i ___Te 4,0 1.78 4.0 } or +" 3| G: Gate ] 8S | S: Source Tot te] ot orain 40 1.78 4.0 Case Outline[(2073] unit: mm 0.5 > 3 r CEL Pte G: Gate 18 8: Source =! D: Drain 39